In the literature the influence of the conducting layer, sometimes called a floating gate, upon d.c.-MISFET characteristics is ignored or only treated in a phenomenological way. Our intentions in this paper are to present a study of the consequences of a conducting layer in an exact way by using the MISFET theory described earlier. It is found that the d.c.-characteristics are influenced by parasitic capacitances from the conducting layer to source and drain and the charge-voltage relations along the channel of the MIS transistor. The theoretical considerations are verified by simulations with Spice 2 and some experimental results and are in agreement with the characteristics already given in the literature referred to.
Voorthuyzen, J. A., & Bergveld, P. (1984). The consequences of the application of a floating gate on d.c.-MISFET characteristics. Solid-state electronics, 27(4), 311-315. https://doi.org/10.1016/0038-1101(84)90163-1