The development of titanium silicide - boron doped polysilicon resistive temperature sensors

E. Vereshchagina; Robertus A.M. Wolters; Johannes G.E. Gardeniers

doi:10.1088/0960-1317/21/10/105022

The development of titanium silicide - boron doped polysilicon resistive temperature sensors

E. Vereshchagina, Robertus A.M. Wolters, Johannes G.E. Gardeniers

Mesoscale Chemical Systems

Research output: Contribution to journal › Article › Academic › peer-review

8 Citations (Scopus)

6 Downloads (Pure)

Abstract

Thin films of titanium silicide (TiSi2) formed on heavily boron-doped polycrystalline silicon (poly-Si/B+) were applied for the first time for resistive temperature sensing. The temperature sensors exhibited a high-temperature coefficient of resistance of 3.8 × 10−3 ◦C−1, a linear dependence of resistance on temperature and an excellent thermal and electrical stability up to 800 ◦C. This work discusses the fabrication method and the morphological and electrical characterization of the TiSi2/poly-Si thin film resistors throughout the stages of its formation.

Original language	English
Pages (from-to)	105022-
Number of pages	14
Journal	Journal of micromechanics and microengineering
Volume	21
Issue number	10
DOIs	https://doi.org/10.1088/0960-1317/21/10/105022
Publication status	Published - 21 Sept 2011

Keywords

METIS-280291
IR-79491
EWI-21354

Access to Document

10.1088/0960-1317/21/10/105022

http://eprints.eemcs.utwente.nl/secure2/21354/01/wolters_m_m.pdf

Cite this

@article{aaff0315dc8f467787aa6edf17527106,

title = "The development of titanium silicide - boron doped polysilicon resistive temperature sensors",

abstract = "Thin films of titanium silicide (TiSi2) formed on heavily boron-doped polycrystalline silicon (poly-Si/B+) were applied for the first time for resistive temperature sensing. The temperature sensors exhibited a high-temperature coefficient of resistance of 3.8 × 10−3 ◦C−1, a linear dependence of resistance on temperature and an excellent thermal and electrical stability up to 800 ◦C. This work discusses the fabrication method and the morphological and electrical characterization of the TiSi2/poly-Si thin film resistors throughout the stages of its formation.",

keywords = "METIS-280291, IR-79491, EWI-21354",

author = "E. Vereshchagina and Wolters, {Robertus A.M.} and Gardeniers, {Johannes G.E.}",

year = "2011",

month = sep,

day = "21",

doi = "10.1088/0960-1317/21/10/105022",

language = "English",

volume = "21",

pages = "105022--",

journal = "Journal of micromechanics and microengineering",

issn = "0960-1317",

publisher = "Institute of Physics (IOP)",

number = "10",

}

TY - JOUR

T1 - The development of titanium silicide - boron doped polysilicon resistive temperature sensors

AU - Vereshchagina, E.

AU - Wolters, Robertus A.M.

AU - Gardeniers, Johannes G.E.

PY - 2011/9/21

Y1 - 2011/9/21

N2 - Thin films of titanium silicide (TiSi2) formed on heavily boron-doped polycrystalline silicon (poly-Si/B+) were applied for the first time for resistive temperature sensing. The temperature sensors exhibited a high-temperature coefficient of resistance of 3.8 × 10−3 ◦C−1, a linear dependence of resistance on temperature and an excellent thermal and electrical stability up to 800 ◦C. This work discusses the fabrication method and the morphological and electrical characterization of the TiSi2/poly-Si thin film resistors throughout the stages of its formation.

AB - Thin films of titanium silicide (TiSi2) formed on heavily boron-doped polycrystalline silicon (poly-Si/B+) were applied for the first time for resistive temperature sensing. The temperature sensors exhibited a high-temperature coefficient of resistance of 3.8 × 10−3 ◦C−1, a linear dependence of resistance on temperature and an excellent thermal and electrical stability up to 800 ◦C. This work discusses the fabrication method and the morphological and electrical characterization of the TiSi2/poly-Si thin film resistors throughout the stages of its formation.

KW - METIS-280291

KW - IR-79491

KW - EWI-21354

U2 - 10.1088/0960-1317/21/10/105022

DO - 10.1088/0960-1317/21/10/105022

M3 - Article

SN - 0960-1317

VL - 21

SP - 105022-

JO - Journal of micromechanics and microengineering

JF - Journal of micromechanics and microengineering

IS - 10

ER -

The development of titanium silicide - boron doped polysilicon resistive temperature sensors

Abstract

Keywords

Access to Document

Fingerprint

Cite this