The development of titanium silicide - boron doped polysilicon resistive temperature sensors

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7 Citations (Scopus)

Abstract

Thin films of titanium silicide (TiSi2) formed on heavily boron-doped polycrystalline silicon (poly-Si/B+) were applied for the first time for resistive temperature sensing. The temperature sensors exhibited a high-temperature coefficient of resistance of 3.8 × 10−3 ◦C−1, a linear dependence of resistance on temperature and an excellent thermal and electrical stability up to 800 ◦C. This work discusses the fabrication method and the morphological and electrical characterization of the TiSi2/poly-Si thin film resistors throughout the stages of its formation.
Original languageEnglish
Pages (from-to)105022-
Number of pages14
JournalJournal of micromechanics and microengineering
Volume21
Issue number10
DOIs
Publication statusPublished - 21 Sep 2011

Keywords

  • METIS-280291
  • IR-79491
  • EWI-21354

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