TY - JOUR
T1 - The distribution of InClx compounds in model polymeric LEDs
T2 - A combined low and high-energy ion beam analysis study
AU - Reijme, M.A.
AU - de Jong, M.P.
AU - Simons, D.P.L.
AU - Schok, M.
AU - van IJzendoorn, L.J.
AU - Denier van der Gon, A.W.
AU - Brongersma, H.H.
AU - de Voigt, M.J.A.
PY - 2002/9
Y1 - 2002/9
N2 - A combination of low- and high-energy ion beam analysis techniques was used to determine the distribution of indium chloride compounds in model polymeric light-emitting diodes (p-LEDs). Parts of polymeric LEDs (polydialkoxyphenylenevinylene (OC1C10-PPV) on indium-tin-oxide (ITO) substrates) were exposed to a HCl/Ar flow to simulate the processes occurring during conversion of precursor PPVs and acid treatment of polymers. Samples with variable exposure times as well as pristine samples were studied with Rutherford backscattering spectrometry (RBS), low energy ion scattering (LEIS), X-ray photoelectron spectroscopy (XPS) and particle induced X-ray emission (PIXE). The RBS measurements show that after HCl exposure indium is distributed throughout the OC1C10-PPV layer. LEIS and XPS measurements indicate that the indium and chlorine are present at the outermost surface of the OC1C10-PPV layer. PIXE measurements in combination with the RBS data demonstrate that the indium chloride in the OC1C10-PPV layer is distributed in blisters (∅ = 50 μm) which are orientated perpendicular to the sample surface. To study the OC1C10-PPV/ITO interface, samples were delaminated by peeling the polymeric layer of the ITO using Scotch tape. LEIS measurements on the fracture planes demonstrate the formation of an interfacial layer between the ITO and the PPV. The implications for p-LEDs are discussed.
AB - A combination of low- and high-energy ion beam analysis techniques was used to determine the distribution of indium chloride compounds in model polymeric light-emitting diodes (p-LEDs). Parts of polymeric LEDs (polydialkoxyphenylenevinylene (OC1C10-PPV) on indium-tin-oxide (ITO) substrates) were exposed to a HCl/Ar flow to simulate the processes occurring during conversion of precursor PPVs and acid treatment of polymers. Samples with variable exposure times as well as pristine samples were studied with Rutherford backscattering spectrometry (RBS), low energy ion scattering (LEIS), X-ray photoelectron spectroscopy (XPS) and particle induced X-ray emission (PIXE). The RBS measurements show that after HCl exposure indium is distributed throughout the OC1C10-PPV layer. LEIS and XPS measurements indicate that the indium and chlorine are present at the outermost surface of the OC1C10-PPV layer. PIXE measurements in combination with the RBS data demonstrate that the indium chloride in the OC1C10-PPV layer is distributed in blisters (∅ = 50 μm) which are orientated perpendicular to the sample surface. To study the OC1C10-PPV/ITO interface, samples were delaminated by peeling the polymeric layer of the ITO using Scotch tape. LEIS measurements on the fracture planes demonstrate the formation of an interfacial layer between the ITO and the PPV. The implications for p-LEDs are discussed.
KW - Indium chloride compounds
KW - Low energy ion scattering
KW - Particle induced X-ray emission
KW - Polymeric LEDs
KW - Rutherford backscattering spectrometry
KW - X-ray photoelectron spectroscopy
KW - n/a OA procedure
UR - http://www.scopus.com/inward/record.url?scp=0036723446&partnerID=8YFLogxK
U2 - 10.1016/S0168-583X(02)00697-3
DO - 10.1016/S0168-583X(02)00697-3
M3 - Article
AN - SCOPUS:0036723446
SN - 0168-583X
VL - 194
SP - 346
EP - 354
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - 3
ER -