Abstract
In this paper, we investigate lateral p+pn+ silicon diodes fabricated on Silicon-On-Insulator. This device distinguishes itself from previous devices by an extra poly-silicon gate electrode on top of the active light-emitting region. The silicon handle substrate is used as second (bottom) gate. When the diode is working under constant current condition, we observe an increased light output as the gate and/or the substrate are biased with negative voltage. The intensity pro?le across the device is also strongly in?uenced. In other words, the light emission from a silicon LED can be varied using a MOS gate. To understand the device thoroughly, the structure has also been simulated showing consistent agreement with experimental measurements.
| Original language | Undefined |
|---|---|
| Pages | 117-120 |
| Number of pages | 4 |
| Publication status | Published - Nov 2005 |
| Event | 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005 - Veldhoven, Netherlands Duration: 17 Nov 2005 → 18 Nov 2005 Conference number: 8 |
Workshop
| Workshop | 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005 |
|---|---|
| Abbreviated title | SAFE |
| Country/Territory | Netherlands |
| City | Veldhoven |
| Period | 17/11/05 → 18/11/05 |
Keywords
- EWI-15516
- radiative recombination
- refractive index
- Optical modulation
- Silicon LED
- IR-67719