The effect of an electric field on a lateral silicon light-emitting diode

P. Le Minh, T. Hoang, J. Holleman, Jurriaan Schmitz

    Research output: Contribution to conferencePaperAcademic

    Abstract

    In this paper, we investigate lateral p+pn+ silicon diodes fabricated on Silicon-On-Insulator. This device distinguishes itself from previous devices by an extra poly-silicon gate electrode on top of the active light-emitting region. The silicon handle substrate is used as second (bottom) gate. When the diode is working under constant current condition, we observe an increased light output as the gate and/or the substrate are biased with negative voltage. The intensity pro?le across the device is also strongly in?uenced. In other words, the light emission from a silicon LED can be varied using a MOS gate. To understand the device thoroughly, the structure has also been simulated showing consistent agreement with experimental measurements.
    Original languageUndefined
    Pages117-120
    Number of pages4
    Publication statusPublished - Nov 2005
    Event8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005 - Veldhoven, Netherlands
    Duration: 17 Nov 200518 Nov 2005
    Conference number: 8

    Workshop

    Workshop8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period17/11/0518/11/05

    Keywords

    • EWI-15516
    • radiative recombination
    • refractive index
    • Optical modulation
    • Silicon LED
    • IR-67719

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