The effect of dislocation loops on the light emission of silicon LEDs

T. Hoang, P. Le Minh, P. LeMinh, J. Holleman, Jurriaan Schmitz

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Abstract

Abstract—Remarkably strong infrared light emission was recently observed from silicon p+-n diodes. In several publications a causal relation is proposed between the larger-than-expected light intensity and the existence of lattice damage around the junction. In this letter, we present direct experimental evidence that lattice damage is in fact detrimental to the efficiency of light emission of silicon LEDs. The experiments call for a revision of the explanation for strong light emission in this type of devices.
Original languageEnglish
Pages (from-to)105-107
Number of pages3
JournalIEEE electron device letters
Volume27
Issue number2/2
DOIs
Publication statusPublished - Feb 2006

Fingerprint

Light emission
Silicon
Light emitting diodes
Diodes
Infrared radiation
Experiments

Keywords

  • SC-SBLE: Silicon-based Light Emitters
  • IR-57575
  • METIS-238056
  • EWI-3747

Cite this

Hoang, T. ; Le Minh, P. ; LeMinh, P. ; Holleman, J. ; Schmitz, Jurriaan. / The effect of dislocation loops on the light emission of silicon LEDs. In: IEEE electron device letters. 2006 ; Vol. 27, No. 2/2. pp. 105-107.
@article{b396ab8dbd5e4377ae3d57f49496f000,
title = "The effect of dislocation loops on the light emission of silicon LEDs",
abstract = "Abstract—Remarkably strong infrared light emission was recently observed from silicon p+-n diodes. In several publications a causal relation is proposed between the larger-than-expected light intensity and the existence of lattice damage around the junction. In this letter, we present direct experimental evidence that lattice damage is in fact detrimental to the efficiency of light emission of silicon LEDs. The experiments call for a revision of the explanation for strong light emission in this type of devices.",
keywords = "SC-SBLE: Silicon-based Light Emitters, IR-57575, METIS-238056, EWI-3747",
author = "T. Hoang and {Le Minh}, P. and P. LeMinh and J. Holleman and Jurriaan Schmitz",
note = "0741-3106/$20.00 {\^A}{\circledC} 2006 IEEE",
year = "2006",
month = "2",
doi = "10.1109/LED.2005.862195",
language = "English",
volume = "27",
pages = "105--107",
journal = "IEEE electron device letters",
issn = "0741-3106",
publisher = "IEEE",
number = "2/2",

}

The effect of dislocation loops on the light emission of silicon LEDs. / Hoang, T.; Le Minh, P.; LeMinh, P.; Holleman, J.; Schmitz, Jurriaan.

In: IEEE electron device letters, Vol. 27, No. 2/2, 02.2006, p. 105-107.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - The effect of dislocation loops on the light emission of silicon LEDs

AU - Hoang, T.

AU - Le Minh, P.

AU - LeMinh, P.

AU - Holleman, J.

AU - Schmitz, Jurriaan

N1 - 0741-3106/$20.00 © 2006 IEEE

PY - 2006/2

Y1 - 2006/2

N2 - Abstract—Remarkably strong infrared light emission was recently observed from silicon p+-n diodes. In several publications a causal relation is proposed between the larger-than-expected light intensity and the existence of lattice damage around the junction. In this letter, we present direct experimental evidence that lattice damage is in fact detrimental to the efficiency of light emission of silicon LEDs. The experiments call for a revision of the explanation for strong light emission in this type of devices.

AB - Abstract—Remarkably strong infrared light emission was recently observed from silicon p+-n diodes. In several publications a causal relation is proposed between the larger-than-expected light intensity and the existence of lattice damage around the junction. In this letter, we present direct experimental evidence that lattice damage is in fact detrimental to the efficiency of light emission of silicon LEDs. The experiments call for a revision of the explanation for strong light emission in this type of devices.

KW - SC-SBLE: Silicon-based Light Emitters

KW - IR-57575

KW - METIS-238056

KW - EWI-3747

U2 - 10.1109/LED.2005.862195

DO - 10.1109/LED.2005.862195

M3 - Article

VL - 27

SP - 105

EP - 107

JO - IEEE electron device letters

JF - IEEE electron device letters

SN - 0741-3106

IS - 2/2

ER -