The effect of dislocation loops on the light emission of silicon LEDs

T. Hoang; P. Le Minh; P. LeMinh; J. Holleman; Jurriaan Schmitz

doi:10.1109/LED.2005.862195

The effect of dislocation loops on the light emission of silicon LEDs

T. Hoang, P. Le Minh, P. LeMinh, J. Holleman, Jurriaan Schmitz

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Abstract

Abstract—Remarkably strong infrared light emission was recently observed from silicon p+-n diodes. In several publications a causal relation is proposed between the larger-than-expected light intensity and the existence of lattice damage around the junction. In this letter, we present direct experimental evidence that lattice damage is in fact detrimental to the efficiency of light emission of silicon LEDs. The experiments call for a revision of the explanation for strong light emission in this type of devices.

Original language	English
Pages (from-to)	105-107
Number of pages	3
Journal	IEEE electron device letters
Volume	27
Issue number	2/2
DOIs	https://doi.org/10.1109/LED.2005.862195
Publication status	Published - Feb 2006

Keywords

SC-SBLE: Silicon-based Light Emitters
IR-57575
METIS-238056
EWI-3747

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10.1109/LED.2005.862195

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abstract = "Abstract—Remarkably strong infrared light emission was recently observed from silicon p+-n diodes. In several publications a causal relation is proposed between the larger-than-expected light intensity and the existence of lattice damage around the junction. In this letter, we present direct experimental evidence that lattice damage is in fact detrimental to the efficiency of light emission of silicon LEDs. The experiments call for a revision of the explanation for strong light emission in this type of devices.",

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T1 - The effect of dislocation loops on the light emission of silicon LEDs

AU - Hoang, T.

AU - Le Minh, P.

AU - LeMinh, P.

AU - Holleman, J.

AU - Schmitz, Jurriaan

PY - 2006/2

Y1 - 2006/2

N2 - Abstract—Remarkably strong infrared light emission was recently observed from silicon p+-n diodes. In several publications a causal relation is proposed between the larger-than-expected light intensity and the existence of lattice damage around the junction. In this letter, we present direct experimental evidence that lattice damage is in fact detrimental to the efficiency of light emission of silicon LEDs. The experiments call for a revision of the explanation for strong light emission in this type of devices.

AB - Abstract—Remarkably strong infrared light emission was recently observed from silicon p+-n diodes. In several publications a causal relation is proposed between the larger-than-expected light intensity and the existence of lattice damage around the junction. In this letter, we present direct experimental evidence that lattice damage is in fact detrimental to the efficiency of light emission of silicon LEDs. The experiments call for a revision of the explanation for strong light emission in this type of devices.

KW - SC-SBLE: Silicon-based Light Emitters

KW - IR-57575

KW - METIS-238056

KW - EWI-3747

U2 - 10.1109/LED.2005.862195

DO - 10.1109/LED.2005.862195

M3 - Article

SN - 0741-3106

VL - 27

SP - 105

EP - 107

JO - IEEE electron device letters

JF - IEEE electron device letters

IS - 2/2

ER -

The effect of dislocation loops on the light emission of silicon LEDs

Abstract

Keywords

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