The effect of dislocation loops on the light emission of silicon LEDs

T. Hoang, P. Le Minh, P. LeMinh, J. Holleman, Jurriaan Schmitz

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    29 Citations (Scopus)
    66 Downloads (Pure)

    Abstract

    Abstract—Remarkably strong infrared light emission was recently observed from silicon p+-n diodes. In several publications a causal relation is proposed between the larger-than-expected light intensity and the existence of lattice damage around the junction. In this letter, we present direct experimental evidence that lattice damage is in fact detrimental to the efficiency of light emission of silicon LEDs. The experiments call for a revision of the explanation for strong light emission in this type of devices.
    Original languageEnglish
    Pages (from-to)105-107
    Number of pages3
    JournalIEEE electron device letters
    Volume27
    Issue number2/2
    DOIs
    Publication statusPublished - Feb 2006

    Keywords

    • SC-SBLE: Silicon-based Light Emitters
    • IR-57575
    • METIS-238056
    • EWI-3747

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