Abstract—Remarkably strong infrared light emission was recently observed from silicon p+-n diodes. In several publications a causal relation is proposed between the larger-than-expected light intensity and the existence of lattice damage around the junction. In this letter, we present direct experimental evidence that lattice damage is in fact detrimental to the efficiency of light emission of silicon LEDs. The experiments call for a revision of the explanation for strong light emission in this type of devices.
- SC-SBLE: Silicon-based Light Emitters
Hoang, T., Le Minh, P., LeMinh, P., Holleman, J., & Schmitz, J. (2006). The effect of dislocation loops on the light emission of silicon LEDs. IEEE electron device letters, 27(2/2), 105-107. https://doi.org/10.1109/LED.2005.862195