The effect of dislocation loops on the light emission of silicon LEDs

T. Hoang, P. Le Minh, J. Holleman, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    6 Citations (Scopus)
    37 Downloads (Pure)

    Abstract

    Recently, different and apparently contradicting results were published regarding the influence of crystal defects on the light emission efficiency of silicon LEDs at room temperature (Wai Lek Ng). In this paper we report our results on light emission of silicon p/sup +/n diodes with various defect engineering approaches. The p/sup +/ region was formed either by ion implantation or by diffusion; and optionally, additional lattice damage was created by silicon ion implantation. The experiments clearly indicate that lattice defects have a detrimental effect on light emission, contrary to the results published in recent years.
    Original languageEnglish
    Title of host publicationProceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005
    Place of PublicationGrenoble, France
    PublisherIEEE
    Pages359-362
    Number of pages4
    ISBN (Print)0-7803-9203-5
    DOIs
    Publication statusPublished - 11 Sep 2005
    Event35th European Solid-State Device Research Conference, ESSDERC 2005 - Grenoble, France
    Duration: 12 Sep 200516 Sep 2005
    Conference number: 35

    Conference

    Conference35th European Solid-State Device Research Conference, ESSDERC 2005
    Abbreviated titleESSDERC
    CountryFrance
    CityGrenoble
    Period12/09/0516/09/05

    Keywords

    • IR-53585
    • METIS-226524

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