The effect of dislocation loops on the light emission of silicon LEDs

T. Hoang; P. Le Minh; J. Holleman; Jurriaan Schmitz

doi:10.1109/ESSDER.2005.1546659

The effect of dislocation loops on the light emission of silicon LEDs

T. Hoang
, P. Le Minh
, J. Holleman
, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (Scopus)

56 Downloads (Pure)

Abstract

Recently, different and apparently contradicting results were published regarding the influence of crystal defects on the light emission efficiency of silicon LEDs at room temperature (Wai Lek Ng). In this paper we report our results on light emission of silicon p/sup +/n diodes with various defect engineering approaches. The p/sup +/ region was formed either by ion implantation or by diffusion; and optionally, additional lattice damage was created by silicon ion implantation. The experiments clearly indicate that lattice defects have a detrimental effect on light emission, contrary to the results published in recent years.

Original language	English
Title of host publication	Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005
Place of Publication	Grenoble, France
Publisher	IEEE
Pages	359-362
Number of pages	4
ISBN (Print)	0-7803-9203-5
DOIs	https://doi.org/10.1109/ESSDER.2005.1546659
Publication status	Published - 11 Sept 2005
Event	35th European Solid-State Device Research Conference, ESSDERC 2005 - Grenoble, France Duration: 12 Sept 2005 → 16 Sept 2005 Conference number: 35

Conference

Conference	35th European Solid-State Device Research Conference, ESSDERC 2005
Abbreviated title	ESSDERC
Country/Territory	France
City	Grenoble
Period	12/09/05 → 16/09/05

Keywords

IR-53585
METIS-226524

Access to Document

10.1109/ESSDER.2005.1546659

Cite this

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title = "The effect of dislocation loops on the light emission of silicon LEDs",

abstract = "Recently, different and apparently contradicting results were published regarding the influence of crystal defects on the light emission efficiency of silicon LEDs at room temperature (Wai Lek Ng). In this paper we report our results on light emission of silicon p/sup +/n diodes with various defect engineering approaches. The p/sup +/ region was formed either by ion implantation or by diffusion; and optionally, additional lattice damage was created by silicon ion implantation. The experiments clearly indicate that lattice defects have a detrimental effect on light emission, contrary to the results published in recent years.",

keywords = "IR-53585, METIS-226524",

author = "T. Hoang and \{Le Minh\}, P. and J. Holleman and Jurriaan Schmitz",

year = "2005",

month = sep,

day = "11",

doi = "10.1109/ESSDER.2005.1546659",

language = "English",

isbn = "0-7803-9203-5",

pages = "359--362",

booktitle = "Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005",

publisher = "IEEE",

address = "United States",

note = "35th European Solid-State Device Research Conference, ESSDERC 2005, ESSDERC ; Conference date: 12-09-2005 Through 16-09-2005",

}

Hoang, T, Le Minh, P, Holleman, J & Schmitz, J 2005, The effect of dislocation loops on the light emission of silicon LEDs. in Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. IEEE, Grenoble, France, pp. 359-362, 35th European Solid-State Device Research Conference, ESSDERC 2005, Grenoble, France, 12/09/05. https://doi.org/10.1109/ESSDER.2005.1546659

TY - GEN

T1 - The effect of dislocation loops on the light emission of silicon LEDs

AU - Hoang, T.

AU - Le Minh, P.

AU - Holleman, J.

AU - Schmitz, Jurriaan

N1 - Conference code: 35

PY - 2005/9/11

Y1 - 2005/9/11

N2 - Recently, different and apparently contradicting results were published regarding the influence of crystal defects on the light emission efficiency of silicon LEDs at room temperature (Wai Lek Ng). In this paper we report our results on light emission of silicon p/sup +/n diodes with various defect engineering approaches. The p/sup +/ region was formed either by ion implantation or by diffusion; and optionally, additional lattice damage was created by silicon ion implantation. The experiments clearly indicate that lattice defects have a detrimental effect on light emission, contrary to the results published in recent years.

AB - Recently, different and apparently contradicting results were published regarding the influence of crystal defects on the light emission efficiency of silicon LEDs at room temperature (Wai Lek Ng). In this paper we report our results on light emission of silicon p/sup +/n diodes with various defect engineering approaches. The p/sup +/ region was formed either by ion implantation or by diffusion; and optionally, additional lattice damage was created by silicon ion implantation. The experiments clearly indicate that lattice defects have a detrimental effect on light emission, contrary to the results published in recent years.

KW - IR-53585

KW - METIS-226524

U2 - 10.1109/ESSDER.2005.1546659

DO - 10.1109/ESSDER.2005.1546659

M3 - Conference contribution

SN - 0-7803-9203-5

SP - 359

EP - 362

BT - Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005

PB - IEEE

CY - Grenoble, France

T2 - 35th European Solid-State Device Research Conference, ESSDERC 2005

Y2 - 12 September 2005 through 16 September 2005

ER -

The effect of dislocation loops on the light emission of silicon LEDs

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Keywords

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