The effect of thin oxide layers on shallow junction formation

P.A. Stolk, J. Schmitz, F.N. Cubaynes, A.C.M.C. Van Brandenburg, J.G.M. van Berkum, W.G. van de Wijgert, F. Roozeboom

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Abstract

This paper studies the influence of thin oxide screening, layers on the formation of shallow junctions by low-energy B. implantation and rapid thermal annealing. For screening oxides, in the range from 0 to 10 nm, it is found that the trade-off between junction depth and sheet resistance (Psh) is not affected as long, as the implanted dose is adjusted to compensate for B trapping in the oxide. For a fixed implant dose and enengy, however, minute variations in the oxide, thickness have, a large infuence on Psh which limits the reproducibility of the junction formation process.

Original languageEnglish
Title of host publicationESSDERC '99
Subtitle of host publicationProceedings of the 29th European Solid-State Device Research Conference : Leuven, Belgium 13-15 September 1999
EditorsH.E. Maes, R.P. Mertens, G. Declerck, H. Grünbacher
Place of PublicationPiscataway, NJ
PublisherIEEE Computer Society
Pages428-431
Number of pages4
ISBN (Print)2-86332-245-1
Publication statusPublished - 1 Jan 1999
Externally publishedYes
Event29th European Solid-State Device Research Conference, ESSDERC 1999 - Leuven, Belgium
Duration: 13 Sep 199915 Sep 1999
Conference number: 29

Conference

Conference29th European Solid-State Device Research Conference, ESSDERC 1999
Abbreviated titleESSDERC
CountryBelgium
CityLeuven
Period13/09/9915/09/99

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