Abstract
This paper studies the influence of thin oxide screening, layers on the formation of shallow junctions by low-energy B. implantation and rapid thermal annealing. For screening oxides, in the range from 0 to 10 nm, it is found that the trade-off between junction depth and sheet resistance (Psh) is not affected as long, as the implanted dose is adjusted to compensate for B trapping in the oxide. For a fixed implant dose and enengy, however, minute variations in the oxide, thickness have, a large infuence on Psh which limits the reproducibility of the junction formation process.
Original language | English |
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Title of host publication | ESSDERC '99 |
Subtitle of host publication | Proceedings of the 29th European Solid-State Device Research Conference : Leuven, Belgium 13-15 September 1999 |
Editors | H.E. Maes, R.P. Mertens, G. Declerck, H. Grünbacher |
Place of Publication | Piscataway, NJ |
Publisher | IEEE Computer Society |
Pages | 428-431 |
Number of pages | 4 |
ISBN (Print) | 2-86332-245-1 |
Publication status | Published - 1 Jan 1999 |
Externally published | Yes |
Event | 29th European Solid-State Device Research Conference, ESSDERC 1999 - Leuven, Belgium Duration: 13 Sep 1999 → 15 Sep 1999 Conference number: 29 |
Conference
Conference | 29th European Solid-State Device Research Conference, ESSDERC 1999 |
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Abbreviated title | ESSDERC |
Country/Territory | Belgium |
City | Leuven |
Period | 13/09/99 → 15/09/99 |