The effect of thin oxide layers on shallow junction formation

P.A. Stolk; J. Schmitz; F.N. Cubaynes; A.C.M.C. Van Brandenburg; J.G.M. van Berkum; W.G. van de Wijgert; F. Roozeboom

The effect of thin oxide layers on shallow junction formation

P.A. Stolk, J. Schmitz, F.N. Cubaynes, A.C.M.C. Van Brandenburg, J.G.M. van Berkum, W.G. van de Wijgert, F. Roozeboom

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

This paper studies the influence of thin oxide screening, layers on the formation of shallow junctions by low-energy B. implantation and rapid thermal annealing. For screening oxides, in the range from 0 to 10 nm, it is found that the trade-off between junction depth and sheet resistance (P_sh) is not affected as long, as the implanted dose is adjusted to compensate for B trapping in the oxide. For a fixed implant dose and enengy, however, minute variations in the oxide, thickness have, a large infuence on P_sh which limits the reproducibility of the junction formation process.

Original language	English
Title of host publication	ESSDERC '99
Subtitle of host publication	Proceedings of the 29th European Solid-State Device Research Conference : Leuven, Belgium 13-15 September 1999
Editors	H.E. Maes, R.P. Mertens, G. Declerck, H. Grünbacher
Place of Publication	Piscataway, NJ
Publisher	IEEE Computer Society
Pages	428-431
Number of pages	4
ISBN (Print)	2-86332-245-1
Publication status	Published - 1 Jan 1999
Externally published	Yes
Event	29th European Solid-State Device Research Conference, ESSDERC 1999 - Leuven, Belgium Duration: 13 Sep 1999 → 15 Sep 1999 Conference number: 29

Conference

Conference	29th European Solid-State Device Research Conference, ESSDERC 1999
Abbreviated title	ESSDERC
Country	Belgium
City	Leuven
Period	13/09/99 → 15/09/99

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Stolk, P. A., Schmitz, J., Cubaynes, F. N., Van Brandenburg, A. C. M. C., van Berkum, J. G. M., van de Wijgert, W. G., & Roozeboom, F. (1999). The effect of thin oxide layers on shallow junction formation. In H. E. Maes, R. P. Mertens, G. Declerck, & H. Grünbacher (Eds.), ESSDERC '99: Proceedings of the 29th European Solid-State Device Research Conference : Leuven, Belgium 13-15 September 1999 (pp. 428-431). [1505531] IEEE Computer Society. https://ieeexplore.ieee.org/document/1505531

Stolk, P.A. ; Schmitz, J. ; Cubaynes, F.N. ; Van Brandenburg, A.C.M.C. ; van Berkum, J.G.M. ; van de Wijgert, W.G. ; Roozeboom, F. / The effect of thin oxide layers on shallow junction formation. ESSDERC '99: Proceedings of the 29th European Solid-State Device Research Conference : Leuven, Belgium 13-15 September 1999. editor / H.E. Maes ; R.P. Mertens ; G. Declerck ; H. Grünbacher. Piscataway, NJ : IEEE Computer Society, 1999. pp. 428-431

@inproceedings{d499335b2b324e4baf19a159cbd5cc8f,

title = "The effect of thin oxide layers on shallow junction formation",

abstract = "This paper studies the influence of thin oxide screening, layers on the formation of shallow junctions by low-energy B. implantation and rapid thermal annealing. For screening oxides, in the range from 0 to 10 nm, it is found that the trade-off between junction depth and sheet resistance (Psh) is not affected as long, as the implanted dose is adjusted to compensate for B trapping in the oxide. For a fixed implant dose and enengy, however, minute variations in the oxide, thickness have, a large infuence on Psh which limits the reproducibility of the junction formation process.",

author = "P.A. Stolk and J. Schmitz and F.N. Cubaynes and {Van Brandenburg}, A.C.M.C. and {van Berkum}, J.G.M. and {van de Wijgert}, W.G. and F. Roozeboom",

year = "1999",

month = jan,

day = "1",

language = "English",

isbn = "2-86332-245-1",

pages = "428--431",

editor = "H.E. Maes and R.P. Mertens and G. Declerck and H. Gr{\"u}nbacher",

booktitle = "ESSDERC '99",

publisher = "IEEE Computer Society",

address = "United States",

note = "29th European Solid-State Device Research Conference, ESSDERC 1999, ESSDERC ; Conference date: 13-09-1999 Through 15-09-1999",

}

Stolk, PA, Schmitz, J, Cubaynes, FN, Van Brandenburg, ACMC, van Berkum, JGM, van de Wijgert, WG & Roozeboom, F 1999, The effect of thin oxide layers on shallow junction formation. in HE Maes, RP Mertens, G Declerck & H Grünbacher (eds), ESSDERC '99: Proceedings of the 29th European Solid-State Device Research Conference : Leuven, Belgium 13-15 September 1999., 1505531, IEEE Computer Society, Piscataway, NJ, pp. 428-431, 29th European Solid-State Device Research Conference, ESSDERC 1999, Leuven, Belgium, 13/09/99. <https://ieeexplore.ieee.org/document/1505531>

The effect of thin oxide layers on shallow junction formation. / Stolk, P.A.; Schmitz, J.; Cubaynes, F.N.; Van Brandenburg, A.C.M.C.; van Berkum, J.G.M.; van de Wijgert, W.G.; Roozeboom, F.

ESSDERC '99: Proceedings of the 29th European Solid-State Device Research Conference : Leuven, Belgium 13-15 September 1999. ed. / H.E. Maes; R.P. Mertens; G. Declerck; H. Grünbacher. Piscataway, NJ : IEEE Computer Society, 1999. p. 428-431 1505531.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - The effect of thin oxide layers on shallow junction formation

AU - Stolk, P.A.

AU - Schmitz, J.

AU - Cubaynes, F.N.

AU - Van Brandenburg, A.C.M.C.

AU - van Berkum, J.G.M.

AU - van de Wijgert, W.G.

AU - Roozeboom, F.

N1 - Conference code: 29

PY - 1999/1/1

Y1 - 1999/1/1

N2 - This paper studies the influence of thin oxide screening, layers on the formation of shallow junctions by low-energy B. implantation and rapid thermal annealing. For screening oxides, in the range from 0 to 10 nm, it is found that the trade-off between junction depth and sheet resistance (Psh) is not affected as long, as the implanted dose is adjusted to compensate for B trapping in the oxide. For a fixed implant dose and enengy, however, minute variations in the oxide, thickness have, a large infuence on Psh which limits the reproducibility of the junction formation process.

AB - This paper studies the influence of thin oxide screening, layers on the formation of shallow junctions by low-energy B. implantation and rapid thermal annealing. For screening oxides, in the range from 0 to 10 nm, it is found that the trade-off between junction depth and sheet resistance (Psh) is not affected as long, as the implanted dose is adjusted to compensate for B trapping in the oxide. For a fixed implant dose and enengy, however, minute variations in the oxide, thickness have, a large infuence on Psh which limits the reproducibility of the junction formation process.

UR - http://www.scopus.com/inward/record.url?scp=84907887536&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84907887536

SN - 2-86332-245-1

SP - 428

EP - 431

BT - ESSDERC '99

A2 - Maes, H.E.

A2 - Mertens, R.P.

A2 - Declerck, G.

A2 - Grünbacher, H.

PB - IEEE Computer Society

CY - Piscataway, NJ

T2 - 29th European Solid-State Device Research Conference, ESSDERC 1999

Y2 - 13 September 1999 through 15 September 1999

ER -

Stolk PA, Schmitz J, Cubaynes FN, Van Brandenburg ACMC, van Berkum JGM, van de Wijgert WG et al. The effect of thin oxide layers on shallow junction formation. In Maes HE, Mertens RP, Declerck G, Grünbacher H, editors, ESSDERC '99: Proceedings of the 29th European Solid-State Device Research Conference : Leuven, Belgium 13-15 September 1999. Piscataway, NJ: IEEE Computer Society. 1999. p. 428-431. 1505531