The extraordinary role of the AlN interlayer in growth of AlN sputtered on Ti electrodes

Tuan Tran; G. Pandraud; F.D. Tichelaar; Duc Minh Nguyen; H. Schellevis; P.M. Sarro

doi:10.1063/1.4835035

The extraordinary role of the AlN interlayer in growth of AlN sputtered on Ti electrodes

Tuan Tran, G. Pandraud, F.D. Tichelaar, Duc Minh Nguyen, H. Schellevis, P.M. Sarro

Research output: Contribution to journal › Article › Academic › peer-review

4 Citations (Scopus)

Abstract

The structure of AlN layers grown on Ti with and without an AlN interlayer between the Si substrate and the Ti layer is investigated. The AlN grains take over the orientation of the Ti columnar grains in both cases. Surprisingly, the Ti grains do not take over completely the orientations of the AlN grains of the interlayer, and show the same columnar grain structure as the sample without interlayer. Hence, the structure of the AlN top layer is independent of the presence of an AlN interlayer below the Ti layer and is mainly determined by the Ti layer microstructure.

Original language	English
Article number	221909
Pages (from-to)	-
Number of pages	3
Journal	Applied physics letters
Volume	103
Issue number	221909
DOIs	https://doi.org/10.1063/1.4835035
Publication status	Published - 2013

Keywords

METIS-299085
IR-88401

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10.1063/1.4835035

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@article{adff99a9cc934388ab73f92adc151a71,

title = "The extraordinary role of the AlN interlayer in growth of AlN sputtered on Ti electrodes",

abstract = "The structure of AlN layers grown on Ti with and without an AlN interlayer between the Si substrate and the Ti layer is investigated. The AlN grains take over the orientation of the Ti columnar grains in both cases. Surprisingly, the Ti grains do not take over completely the orientations of the AlN grains of the interlayer, and show the same columnar grain structure as the sample without interlayer. Hence, the structure of the AlN top layer is independent of the presence of an AlN interlayer below the Ti layer and is mainly determined by the Ti layer microstructure.",

keywords = "METIS-299085, IR-88401",

author = "Tuan Tran and G. Pandraud and F.D. Tichelaar and Nguyen, {Duc Minh} and H. Schellevis and P.M. Sarro",

year = "2013",

doi = "10.1063/1.4835035",

language = "English",

volume = "103",

pages = "--",

journal = "Applied physics letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "221909",

}

TY - JOUR

T1 - The extraordinary role of the AlN interlayer in growth of AlN sputtered on Ti electrodes

AU - Tran, Tuan

AU - Pandraud, G.

AU - Tichelaar, F.D.

AU - Nguyen, Duc Minh

AU - Schellevis, H.

AU - Sarro, P.M.

PY - 2013

Y1 - 2013

N2 - The structure of AlN layers grown on Ti with and without an AlN interlayer between the Si substrate and the Ti layer is investigated. The AlN grains take over the orientation of the Ti columnar grains in both cases. Surprisingly, the Ti grains do not take over completely the orientations of the AlN grains of the interlayer, and show the same columnar grain structure as the sample without interlayer. Hence, the structure of the AlN top layer is independent of the presence of an AlN interlayer below the Ti layer and is mainly determined by the Ti layer microstructure.

AB - The structure of AlN layers grown on Ti with and without an AlN interlayer between the Si substrate and the Ti layer is investigated. The AlN grains take over the orientation of the Ti columnar grains in both cases. Surprisingly, the Ti grains do not take over completely the orientations of the AlN grains of the interlayer, and show the same columnar grain structure as the sample without interlayer. Hence, the structure of the AlN top layer is independent of the presence of an AlN interlayer below the Ti layer and is mainly determined by the Ti layer microstructure.

KW - METIS-299085

KW - IR-88401

U2 - 10.1063/1.4835035

DO - 10.1063/1.4835035

M3 - Article

VL - 103

SP - -

JO - Applied physics letters

JF - Applied physics letters

SN - 0003-6951

IS - 221909

M1 - 221909

ER -