The form of etch rate minima in wet chemical anisotropic etching of silicon

Michael Curt Elwenspoek

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    Abstract

    Etching of monocrystalline silicon in alkaline based solutions leads to a deep minimum in the etch rate crystallographically oriented along [Left angle bracket]111[Right Angle Bracket]. The details of the form of the minimum (angular dependence of the etch rate) are investigated and discussed in a framework of steps originating from spontaneous nucleation and from misorientation of the crystal face exposed to the etchant. As a result, the etch rate minimum is characterized by a narrow flat portion that reflects the density of nuclei, and the temperature dependence of the width has an activation energy equal to 1/3 of the nucleation barrier.
    Original languageUndefined
    Pages (from-to)405-409
    Number of pages5
    JournalJournal of micromechanics and microengineering
    Volume6
    Issue number6
    DOIs
    Publication statusPublished - Dec 1996

    Keywords

    • EWI-13542
    • IR-14219
    • METIS-111496

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