The generation and detection of high flux atomic oxygen for physical vapor deposition thin film growth

N.J.C. Ingle; R.H. Hammond; M.R. Beasley; David H.A. Blank

doi:10.1063/1.125569

The generation and detection of high flux atomic oxygen for physical vapor deposition thin film growth

N.J.C. Ingle, R.H. Hammond, M.R. Beasley, David H.A. Blank

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Abstract

The growth of many epitaxial thin-film oxides is significantly enhanced with the use of an oxidizing agent such as atomic oxygen, ozone, or NO2. We developed a flow-through microwave plasma source to generate large atomic oxygen fluxes while maintaining vacuum pressures of less that 1×10¿4 Torr. Continuous and real-time detection of the atomic oxygen was achieved by atomic absorption of the 130 nm atomic oxygen lines. Atomic oxygen fluxes of at least 1.4×1018 atoms/cm2 s and dissociation efficiencies of around 100% were obtained

Original language	Undefined
Pages (from-to)	4162-4164
Number of pages	3
Journal	Applied physics letters
Volume	75
Issue number	26
DOIs	https://doi.org/10.1063/1.125569
Publication status	Published - 1999

Keywords

METIS-128770
IR-23971

Access to Document

10.1063/1.125569

Cite this

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abstract = "The growth of many epitaxial thin-film oxides is significantly enhanced with the use of an oxidizing agent such as atomic oxygen, ozone, or NO2. We developed a flow-through microwave plasma source to generate large atomic oxygen fluxes while maintaining vacuum pressures of less that 1×10¿4 Torr. Continuous and real-time detection of the atomic oxygen was achieved by atomic absorption of the 130 nm atomic oxygen lines. Atomic oxygen fluxes of at least 1.4×1018 atoms/cm2 s and dissociation efficiencies of around 100% were obtained",

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T1 - The generation and detection of high flux atomic oxygen for physical vapor deposition thin film growth

AU - Ingle, N.J.C.

AU - Hammond, R.H.

AU - Beasley, M.R.

AU - Blank, David H.A.

PY - 1999

Y1 - 1999

N2 - The growth of many epitaxial thin-film oxides is significantly enhanced with the use of an oxidizing agent such as atomic oxygen, ozone, or NO2. We developed a flow-through microwave plasma source to generate large atomic oxygen fluxes while maintaining vacuum pressures of less that 1×10¿4 Torr. Continuous and real-time detection of the atomic oxygen was achieved by atomic absorption of the 130 nm atomic oxygen lines. Atomic oxygen fluxes of at least 1.4×1018 atoms/cm2 s and dissociation efficiencies of around 100% were obtained

AB - The growth of many epitaxial thin-film oxides is significantly enhanced with the use of an oxidizing agent such as atomic oxygen, ozone, or NO2. We developed a flow-through microwave plasma source to generate large atomic oxygen fluxes while maintaining vacuum pressures of less that 1×10¿4 Torr. Continuous and real-time detection of the atomic oxygen was achieved by atomic absorption of the 130 nm atomic oxygen lines. Atomic oxygen fluxes of at least 1.4×1018 atoms/cm2 s and dissociation efficiencies of around 100% were obtained

KW - METIS-128770

KW - IR-23971

U2 - 10.1063/1.125569

DO - 10.1063/1.125569

M3 - Article

SN - 0003-6951

VL - 75

SP - 4162

EP - 4164

JO - Applied physics letters

JF - Applied physics letters

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