The impact of deuterated CMOS processing on gate oxide reliability

A.J. Hof, E. Hoekstra, A.Y. Kovalgin, R. van Schaijk, W.M. Baks, J. Schmitz

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    In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. In particular, the influence of deuterium incorporation on the bulk oxide quality is not clear. In this letter, deuterium or hydrogen is introduced during either the gate oxidation, postoxidation anneal, and/or the postmetal anneal (PMA). The oxide bulk degradation was evaluated using charge-to-breakdown and stress-induced leakage current; and the oxide interface degradation using hot-carrier degradation and low-frequency noise. The obtained results show that the oxide bulk does not benefit from the presence of deuterium, regardless of the stage of deuterium introduction, or the gate oxide thickness. The oxide interface is more stable only when deuterium is introduced in the PMA.
    Original languageEnglish
    Pages (from-to)2111-2115
    Number of pages5
    JournalIEEE Transactions on Electron Devices
    Issue number9
    Publication statusPublished - 1 Jun 2005


    • CMOS integrated circuits
    • Annealing
    • Electric breakdown
    • Hot carriers
    • Leakage currents
    • MOS capacitors
    • MOSFETs
    • Oxidation
    • Weibull distributions
    • Deuterium
    • Noise


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