The Influence of Fluorine on the Stress-Induced Leakage Current Characteristics in n+ Poly-Si MOS Capacitors

V.E. Houtsma, J. Holleman, P.H. Woerlee, A.J. Hof

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationProceedings of the SAFE'98
    Place of PublicationMierlo, the Netherlands
    Pages221-224
    Number of pages4
    Publication statusPublished - 25 Nov 1998

    Keywords

    • METIS-113846

    Cite this

    Houtsma, V. E., Holleman, J., Woerlee, P. H., & Hof, A. J. (1998). The Influence of Fluorine on the Stress-Induced Leakage Current Characteristics in n+ Poly-Si MOS Capacitors. In Proceedings of the SAFE'98 (pp. 221-224). Mierlo, the Netherlands.