The Influence of Oxide Charge on Carrier Mobility in HfO2/TiN Gate Silicon MOSFETs

Paul K. Hurley, Adi Negara, T. van Hemert, Karim Cherkaoui

    Research output: Contribution to journal › Article › Academic

    2 Citations (Scopus)
    3 Downloads (Pure)

    Fingerprint

    Dive into the research topics of 'The Influence of Oxide Charge on Carrier Mobility in HfO2/TiN Gate Silicon MOSFETs'. Together they form a unique fingerprint.