The influence of oxide layer thickness on light sensitivity and drift of Ta2O5-gate ISFET

A. Bratov, Johan G. Bomer, Piet Bergveld, Wouter Olthuis

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationDigest of the 4th international meeting on Chemical Sensors
    Place of PublicationTokyo, Japan
    Pages742-743
    Number of pages2
    Publication statusPublished - 13 Sep 1992

    Keywords

    • METIS-114162

    Cite this

    Bratov, A., Bomer, J. G., Bergveld, P., & Olthuis, W. (1992). The influence of oxide layer thickness on light sensitivity and drift of Ta2O5-gate ISFET. In Digest of the 4th international meeting on Chemical Sensors (pp. 742-743). Tokyo, Japan.