The influence of oxide layer thickness on light sensitivity and drift of Ta2O5-gate ISFET

A. Bratov, Johan G. Bomer, Piet Bergveld, Wouter Olthuis

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationDigest of the 4th international meeting on Chemical Sensors
    Place of PublicationTokyo, Japan
    Pages742-743
    Number of pages2
    Publication statusPublished - 13 Sep 1992

    Keywords

    • METIS-114162

    Cite this

    Bratov, A., Bomer, J. G., Bergveld, P., & Olthuis, W. (1992). The influence of oxide layer thickness on light sensitivity and drift of Ta2O5-gate ISFET. In Digest of the 4th international meeting on Chemical Sensors (pp. 742-743). Tokyo, Japan.
    Bratov, A. ; Bomer, Johan G. ; Bergveld, Piet ; Olthuis, Wouter. / The influence of oxide layer thickness on light sensitivity and drift of Ta2O5-gate ISFET. Digest of the 4th international meeting on Chemical Sensors. Tokyo, Japan, 1992. pp. 742-743
    @inproceedings{f71e82e392e64d46a8bba94e3f98cae7,
    title = "The influence of oxide layer thickness on light sensitivity and drift of Ta2O5-gate ISFET",
    keywords = "METIS-114162",
    author = "A. Bratov and Bomer, {Johan G.} and Piet Bergveld and Wouter Olthuis",
    year = "1992",
    month = "9",
    day = "13",
    language = "Undefined",
    pages = "742--743",
    booktitle = "Digest of the 4th international meeting on Chemical Sensors",

    }

    Bratov, A, Bomer, JG, Bergveld, P & Olthuis, W 1992, The influence of oxide layer thickness on light sensitivity and drift of Ta2O5-gate ISFET. in Digest of the 4th international meeting on Chemical Sensors. Tokyo, Japan, pp. 742-743.

    The influence of oxide layer thickness on light sensitivity and drift of Ta2O5-gate ISFET. / Bratov, A.; Bomer, Johan G.; Bergveld, Piet; Olthuis, Wouter.

    Digest of the 4th international meeting on Chemical Sensors. Tokyo, Japan, 1992. p. 742-743.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    TY - GEN

    T1 - The influence of oxide layer thickness on light sensitivity and drift of Ta2O5-gate ISFET

    AU - Bratov, A.

    AU - Bomer, Johan G.

    AU - Bergveld, Piet

    AU - Olthuis, Wouter

    PY - 1992/9/13

    Y1 - 1992/9/13

    KW - METIS-114162

    M3 - Conference contribution

    SP - 742

    EP - 743

    BT - Digest of the 4th international meeting on Chemical Sensors

    CY - Tokyo, Japan

    ER -

    Bratov A, Bomer JG, Bergveld P, Olthuis W. The influence of oxide layer thickness on light sensitivity and drift of Ta2O5-gate ISFET. In Digest of the 4th international meeting on Chemical Sensors. Tokyo, Japan. 1992. p. 742-743