The influence of oxide layer thickness on light sensitivity and drift of Ta2O5-gate ISFET

A. Bratov, Johan G. Bomer, Piet Bergveld, Wouter Olthuis

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Original languageUndefined
Title of host publicationDigest of the 4th international meeting on Chemical Sensors
Place of PublicationTokyo, Japan
Pages742-743
Number of pages2
Publication statusPublished - 13 Sep 1992

Keywords

  • METIS-114162

Cite this

Bratov, A., Bomer, J. G., Bergveld, P., & Olthuis, W. (1992). The influence of oxide layer thickness on light sensitivity and drift of Ta2O5-gate ISFET. In Digest of the 4th international meeting on Chemical Sensors (pp. 742-743). Tokyo, Japan.
Bratov, A. ; Bomer, Johan G. ; Bergveld, Piet ; Olthuis, Wouter. / The influence of oxide layer thickness on light sensitivity and drift of Ta2O5-gate ISFET. Digest of the 4th international meeting on Chemical Sensors. Tokyo, Japan, 1992. pp. 742-743
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title = "The influence of oxide layer thickness on light sensitivity and drift of Ta2O5-gate ISFET",
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author = "A. Bratov and Bomer, {Johan G.} and Piet Bergveld and Wouter Olthuis",
year = "1992",
month = "9",
day = "13",
language = "Undefined",
pages = "742--743",
booktitle = "Digest of the 4th international meeting on Chemical Sensors",

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Bratov, A, Bomer, JG, Bergveld, P & Olthuis, W 1992, The influence of oxide layer thickness on light sensitivity and drift of Ta2O5-gate ISFET. in Digest of the 4th international meeting on Chemical Sensors. Tokyo, Japan, pp. 742-743.

The influence of oxide layer thickness on light sensitivity and drift of Ta2O5-gate ISFET. / Bratov, A.; Bomer, Johan G.; Bergveld, Piet; Olthuis, Wouter.

Digest of the 4th international meeting on Chemical Sensors. Tokyo, Japan, 1992. p. 742-743.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - The influence of oxide layer thickness on light sensitivity and drift of Ta2O5-gate ISFET

AU - Bratov, A.

AU - Bomer, Johan G.

AU - Bergveld, Piet

AU - Olthuis, Wouter

PY - 1992/9/13

Y1 - 1992/9/13

KW - METIS-114162

M3 - Conference contribution

SP - 742

EP - 743

BT - Digest of the 4th international meeting on Chemical Sensors

CY - Tokyo, Japan

ER -

Bratov A, Bomer JG, Bergveld P, Olthuis W. The influence of oxide layer thickness on light sensitivity and drift of Ta2O5-gate ISFET. In Digest of the 4th international meeting on Chemical Sensors. Tokyo, Japan. 1992. p. 742-743