The influence of oxide layer thickness on light sensitivity and drift of Ta2O5-gate ISFET

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	Undefined
Title of host publication	Digest of the 4th international meeting on Chemical Sensors
Place of Publication	Tokyo, Japan
Pages	742-743
Number of pages	2
Publication status	Published - 13 Sept 1992

Keywords

@inproceedings{f71e82e392e64d46a8bba94e3f98cae7,

title = "The influence of oxide layer thickness on light sensitivity and drift of Ta2O5-gate ISFET",

keywords = "METIS-114162",

author = "A. Bratov and Bomer, \{Johan G.\} and Piet Bergveld and Wouter Olthuis",

year = "1992",

month = sep,

day = "13",

language = "Undefined",

pages = "742--743",

booktitle = "Digest of the 4th international meeting on Chemical Sensors",

}