The influence of strain on the diffusion of Si dimers on Si(001)

E. Zoethout, O. Gurlu, Henricus J.W. Zandvliet, Bene Poelsema

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Abstract

The influence of lattice mismatch-induced tensile strain on the diffusion of Si dimers on Si(001) has been studied. The rate of surface diffusion of a Si dimer along the substrate dimer rows is relatively insensitive to tensile strain, whereas the rate of diffusion for a Si dimer across the substrate dimer rows is significantly enhanced. The insensitivity of the along row diffusion rate for tensile strain is attributed to the presence of a dissociative intermediate state of the ad-dimer during diffusion rather than diffusion as a solid unit.
Original languageUndefined
Pages (from-to)247-252
Number of pages6
JournalSurface science
Volume452
Issue number1-3
DOIs
Publication statusPublished - 2000

Keywords

  • METIS-128675
  • IR-73141

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