The influence of technology variation on ggNMOSTs and SCRs against CDM BSD stress

M.S.B. Sowariraj; Cora Salm; Ton Mouthaan; Fred G. Kuper; Theo Smedes

doi:10.1016/S0026-2714(02)00136-1

The influence of technology variation on ggNMOSTs and SCRs against CDM BSD stress

M.S.B. Sowariraj^*, Cora Salm, Ton Mouthaan, Fred G. Kuper, Theo Smedes

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › Academic › peer-review

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Abstract

In this paper we present a systematic study on the effect of process and layout variation for grounded-gate NMOSTs and L VTSCRs in a 0.18μ,m technology under negative non-socketed Charged Device Model (CDM) stress. Failure Analysis of the stressed devices was done using Scanning Electron Microscopy (SEM). A comparison of the CDM test results with those of ggNMOSTs in various other technologies is also presented. It is shown that the CDM robustness of ggNMOSTs increases with technology scaling and that the performance ofL VTSCRs can be as good as that of ggNMOSTs under CDM stresses.

Original language	English
Pages (from-to)	1287-1292
Number of pages	6
Journal	Microelectronics reliability
Volume	42
Issue number	9-11
DOIs	https://doi.org/10.1016/S0026-2714(02)00136-1
Publication status	Published - 2002
Event	13th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2002 - Bellaria, Italy Duration: 7 Oct 2002 → 11 Oct 2002 Conference number: 13

Keywords

2023 OA procedure

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10.1016/S0026-2714(02)00136-1

ArticleFinal published version, 1.11 MBLicence: Taverne

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title = "The influence of technology variation on ggNMOSTs and SCRs against CDM BSD stress",

abstract = "In this paper we present a systematic study on the effect of process and layout variation for grounded-gate NMOSTs and L VTSCRs in a 0.18μ,m technology under negative non-socketed Charged Device Model (CDM) stress. Failure Analysis of the stressed devices was done using Scanning Electron Microscopy (SEM). A comparison of the CDM test results with those of ggNMOSTs in various other technologies is also presented. It is shown that the CDM robustness of ggNMOSTs increases with technology scaling and that the performance ofL VTSCRs can be as good as that of ggNMOSTs under CDM stresses.",

keywords = "2023 OA procedure",

author = "M.S.B. Sowariraj and Cora Salm and Ton Mouthaan and Kuper, {Fred G.} and Theo Smedes",

year = "2002",

doi = "10.1016/S0026-2714(02)00136-1",

language = "English",

volume = "42",

pages = "1287--1292",

journal = "Microelectronics reliability",

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TY - JOUR

T1 - The influence of technology variation on ggNMOSTs and SCRs against CDM BSD stress

AU - Sowariraj, M.S.B.

AU - Salm, Cora

AU - Mouthaan, Ton

AU - Kuper, Fred G.

AU - Smedes, Theo

N1 - Conference code: 13

PY - 2002

Y1 - 2002

N2 - In this paper we present a systematic study on the effect of process and layout variation for grounded-gate NMOSTs and L VTSCRs in a 0.18μ,m technology under negative non-socketed Charged Device Model (CDM) stress. Failure Analysis of the stressed devices was done using Scanning Electron Microscopy (SEM). A comparison of the CDM test results with those of ggNMOSTs in various other technologies is also presented. It is shown that the CDM robustness of ggNMOSTs increases with technology scaling and that the performance ofL VTSCRs can be as good as that of ggNMOSTs under CDM stresses.

AB - In this paper we present a systematic study on the effect of process and layout variation for grounded-gate NMOSTs and L VTSCRs in a 0.18μ,m technology under negative non-socketed Charged Device Model (CDM) stress. Failure Analysis of the stressed devices was done using Scanning Electron Microscopy (SEM). A comparison of the CDM test results with those of ggNMOSTs in various other technologies is also presented. It is shown that the CDM robustness of ggNMOSTs increases with technology scaling and that the performance ofL VTSCRs can be as good as that of ggNMOSTs under CDM stresses.

KW - 2023 OA procedure

U2 - 10.1016/S0026-2714(02)00136-1

DO - 10.1016/S0026-2714(02)00136-1

M3 - Conference article

SN - 0026-2714

VL - 42

SP - 1287

EP - 1292

JO - Microelectronics reliability

JF - Microelectronics reliability

IS - 9-11

T2 - 13th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2002

Y2 - 7 October 2002 through 11 October 2002

ER -

The influence of technology variation on ggNMOSTs and SCRs against CDM BSD stress

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