TY - JOUR
T1 - The influence of the (2 × 1) reconstruction of the Si(1 0 0) surface on the Si---L2,3 VV Auger lineshape
AU - Sasse, A.G.B.M.
AU - van der Hoef, Martin Anton
AU - Wormeester, Herbert
AU - van Silfhout, Arend
PY - 1989
Y1 - 1989
N2 - The extreme surface sensitiveness of the Si---L2,3 VV Auger process and its ability to probe the atomic electron distribution in the direct neighbourhood of the L2,3-core-hold makes this electron spectroscopic technique a candidate for investigations of the local changes in the electron distribution due to surface reconstruction. In this paper we show, explicitly, the influence of the (2 × 1) reconstruction of the Si(1 0 0) surface on the Si---L2,3 VV Auger lineshape. Furthermore, the calculated Auger lineshape will be compared with an experimentally obtained line profile.
AB - The extreme surface sensitiveness of the Si---L2,3 VV Auger process and its ability to probe the atomic electron distribution in the direct neighbourhood of the L2,3-core-hold makes this electron spectroscopic technique a candidate for investigations of the local changes in the electron distribution due to surface reconstruction. In this paper we show, explicitly, the influence of the (2 × 1) reconstruction of the Si(1 0 0) surface on the Si---L2,3 VV Auger lineshape. Furthermore, the calculated Auger lineshape will be compared with an experimentally obtained line profile.
KW - IR-70480
U2 - 10.1016/0038-1098(89)90174-9
DO - 10.1016/0038-1098(89)90174-9
M3 - Article
VL - 71
SP - 65
EP - 69
JO - Solid state communications
JF - Solid state communications
SN - 0038-1098
IS - 1
ER -