The influence of the (2 × 1) reconstruction of the Si(1 0 0) surface on the Si---L2,3 VV Auger lineshape

A.G.B.M. Sasse, Martin Anton van der Hoef, Herbert Wormeester, Arend van Silfhout

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Abstract

The extreme surface sensitiveness of the Si---L2,3 VV Auger process and its ability to probe the atomic electron distribution in the direct neighbourhood of the L2,3-core-hold makes this electron spectroscopic technique a candidate for investigations of the local changes in the electron distribution due to surface reconstruction. In this paper we show, explicitly, the influence of the (2 × 1) reconstruction of the Si(1 0 0) surface on the Si---L2,3 VV Auger lineshape. Furthermore, the calculated Auger lineshape will be compared with an experimentally obtained line profile.
Original languageUndefined
Pages (from-to)65-69
JournalSolid state communications
Volume71
Issue number1
DOIs
Publication statusPublished - 1989

Keywords

  • IR-70480

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