The interpretation of ellipsometric measurements of ion bombardment of noble gases on semiconductor surfaces

A.H.M. Holtslag; U.C. Slager; Arend van Silfhout

doi:10.1016/0039-6028(85)90523-0

The interpretation of ellipsometric measurements of ion bombardment of noble gases on semiconductor surfaces

A.H.M. Holtslag, U.C. Slager, Arend van Silfhout

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Abstract

Low energy noble gas ion bombardment and thermal desorption studies were carried out on Si(111) and analysed, in situ, using spectroscopic ellipsometry. The amorphous layer thickness and implanted noble gas fraction were calculated.

Original language	Undefined
Pages (from-to)	1079-1085
Journal	Surface science
Volume	152-15
Issue number	Part 2
DOIs	https://doi.org/10.1016/0039-6028(85)90523-0
Publication status	Published - 1985

Keywords

IR-69499

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10.1016/0039-6028(85)90523-0

Holtslag85interpretation

Cite this

@article{2c5b2f48928a4315b96d0338f31c5091,

title = "The interpretation of ellipsometric measurements of ion bombardment of noble gases on semiconductor surfaces",

abstract = "Low energy noble gas ion bombardment and thermal desorption studies were carried out on Si(111) and analysed, in situ, using spectroscopic ellipsometry. The amorphous layer thickness and implanted noble gas fraction were calculated.",

keywords = "IR-69499",

author = "A.H.M. Holtslag and U.C. Slager and {van Silfhout}, Arend",

year = "1985",

doi = "10.1016/0039-6028(85)90523-0",

language = "Undefined",

volume = "152-15",

pages = "1079--1085",

journal = "Surface science",

issn = "0039-6028",

publisher = "Elsevier",

number = "Part 2",

}

TY - JOUR

T1 - The interpretation of ellipsometric measurements of ion bombardment of noble gases on semiconductor surfaces

AU - Holtslag, A.H.M.

AU - Slager, U.C.

AU - van Silfhout, Arend

PY - 1985

Y1 - 1985

N2 - Low energy noble gas ion bombardment and thermal desorption studies were carried out on Si(111) and analysed, in situ, using spectroscopic ellipsometry. The amorphous layer thickness and implanted noble gas fraction were calculated.

AB - Low energy noble gas ion bombardment and thermal desorption studies were carried out on Si(111) and analysed, in situ, using spectroscopic ellipsometry. The amorphous layer thickness and implanted noble gas fraction were calculated.

KW - IR-69499

U2 - 10.1016/0039-6028(85)90523-0

DO - 10.1016/0039-6028(85)90523-0

M3 - Article

SN - 0039-6028

VL - 152-15

SP - 1079

EP - 1085

JO - Surface science

JF - Surface science

IS - Part 2

ER -