Abstract
Low energy noble gas ion bombardment and thermal desorption studies were carried out on Si(111) and analysed, in situ, using spectroscopic ellipsometry. The amorphous layer thickness and implanted noble gas fraction were calculated.
Original language | Undefined |
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Pages (from-to) | 1079-1085 |
Journal | Surface science |
Volume | 152-15 |
Issue number | Part 2 |
DOIs | |
Publication status | Published - 1985 |
Keywords
- IR-69499