The interpretation of ellipsometric measurements of ion bombardment of noble gases on semiconductor surfaces

A.H.M. Holtslag, U.C. Slager, Arend van Silfhout

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    Abstract

    Low energy noble gas ion bombardment and thermal desorption studies were carried out on Si(111) and analysed, in situ, using spectroscopic ellipsometry. The amorphous layer thickness and implanted noble gas fraction were calculated.
    Original languageUndefined
    Pages (from-to)1079-1085
    JournalSurface science
    Volume152-15
    Issue numberPart 2
    DOIs
    Publication statusPublished - 1985

    Keywords

    • IR-69499

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