The laser induced fluorescence spectrum of SiF around 193 nm

Maarten Ebben*, Michel Versluis, J. J. ter Meulen

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

6 Citations (Scopus)
20 Downloads (Pure)

Abstract

Fluorescence of SiF radicals induced by a tunable ArF excimer laser is reported. The radicals are prepared using laser vaporization and subsequent supersonic cooling. A tentative assignment of the most prominent features in the spectrum is given. The spectrum deviates from what can be expected from the extensive emission spectroscopic data. Delayed fluorescence detection is used to unravel the congested structure, and a previously unobserved electronic state, which we label D(2)2Π, with (in cm-1) Tve = 52128.7 ± 0.1, Bv = 0.629 ± 0.001, Av = 5.7 ± 0.1, and (in nsec) τ = 110 ± 8, is characterized. Franck-Condon factor calculations permit the vibrational assignment of the excited state on the basis of the dispersed fluorescence spectrum.

Original languageEnglish
Pages (from-to)329-340
Number of pages12
JournalJournal of molecular spectroscopy
Volume149
Issue number2
DOIs
Publication statusPublished - 1 Jan 1991
Externally publishedYes

Fingerprint

Dive into the research topics of 'The laser induced fluorescence spectrum of SiF around 193 nm'. Together they form a unique fingerprint.

Cite this