The measurement of interface state charge in the MOS system

Jan Koomen

Research output: Contribution to journalArticleAcademic

14 Citations (Scopus)
18 Downloads (Pure)

Abstract

A simple method of measuring charge in surface states as a function of the surfacepotential in MOS transistor or MOS capacitors is proposed. A constant d.c. current is fed into the gate of an MOS transistor and with the help of an operational amplifier, the gate voltage Vg with respect to the bulk is plotted as a function of gate charge Qg. The gate charge as a function of the surfacepotential φs can be directly read off from the Vg-Qg curve. As the silicon charge Qs(φs) is known from the literature the surface state charge can be easily determined as a function of φs. The method is illustrated with measurements on n-type and p-type MOS transistors. Finally the accuracy of the charge measuring method is discussed and a comparison with other interface state charge measuring methods is made from which the charge measuring method evolves as a method, attractive for its simplicity.
Original languageEnglish
Pages (from-to)571-580
JournalSolid-state electronics
Volume14
Issue number7
DOIs
Publication statusPublished - 1971
Externally publishedYes

Fingerprint

Interface states
MOSFET devices
Surface states
transistors
MOS capacitors
Operational amplifiers
Silicon
operational amplifiers
Electric potential
capacitors
electric potential
silicon
curves

Keywords

  • IR-68113

Cite this

Koomen, Jan. / The measurement of interface state charge in the MOS system. In: Solid-state electronics. 1971 ; Vol. 14, No. 7. pp. 571-580.
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The measurement of interface state charge in the MOS system. / Koomen, Jan.

In: Solid-state electronics, Vol. 14, No. 7, 1971, p. 571-580.

Research output: Contribution to journalArticleAcademic

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PY - 1971

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AB - A simple method of measuring charge in surface states as a function of the surfacepotential in MOS transistor or MOS capacitors is proposed. A constant d.c. current is fed into the gate of an MOS transistor and with the help of an operational amplifier, the gate voltage Vg with respect to the bulk is plotted as a function of gate charge Qg. The gate charge as a function of the surfacepotential φs can be directly read off from the Vg-Qg curve. As the silicon charge Qs(φs) is known from the literature the surface state charge can be easily determined as a function of φs. The method is illustrated with measurements on n-type and p-type MOS transistors. Finally the accuracy of the charge measuring method is discussed and a comparison with other interface state charge measuring methods is made from which the charge measuring method evolves as a method, attractive for its simplicity.

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