The optical and the electronic response of the Ge(111)-c(2 × 8) surface to O2 exposure

Henricus J.W. Zandvliet; Arend van Silfhout

doi:10.1016/0038-1098(88)90107-X

The optical and the electronic response of the Ge(111)-c(2 × 8) surface to O2 exposure

Henricus J.W. Zandvliet
, Arend van Silfhout

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Abstract

This Communication describes a study concerning the interaction of molecular oxygen with a clean Ge(111)-c(2 × 8) surface. This reaction has been studied by in situ monitoring the ellipsometric reflection and the surface conductance. In order to explain the experimental results a model is proposed assuming a gradual disappearance of donor and acceptor surface states. The final stage in the adsorption process is characterized by the saturation of an acceptor surface state related to an optical transition at hv = 1.9 eV.

Original language	Undefined
Pages (from-to)	1425-1427
Journal	Solid state communications
Volume	65
Issue number	11
DOIs	https://doi.org/10.1016/0038-1098(88)90107-X
Publication status	Published - 1988

Keywords

IR-70155

Access to Document

10.1016/0038-1098(88)90107-X

Zandvliet88optical

Cite this

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title = "The optical and the electronic response of the Ge(111)-c(2 × 8) surface to O2 exposure",

abstract = "This Communication describes a study concerning the interaction of molecular oxygen with a clean Ge(111)-c(2 × 8) surface. This reaction has been studied by in situ monitoring the ellipsometric reflection and the surface conductance. In order to explain the experimental results a model is proposed assuming a gradual disappearance of donor and acceptor surface states. The final stage in the adsorption process is characterized by the saturation of an acceptor surface state related to an optical transition at hv = 1.9 eV.",

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T1 - The optical and the electronic response of the Ge(111)-c(2 × 8) surface to O2 exposure

AU - Zandvliet, Henricus J.W.

AU - van Silfhout, Arend

PY - 1988

Y1 - 1988

N2 - This Communication describes a study concerning the interaction of molecular oxygen with a clean Ge(111)-c(2 × 8) surface. This reaction has been studied by in situ monitoring the ellipsometric reflection and the surface conductance. In order to explain the experimental results a model is proposed assuming a gradual disappearance of donor and acceptor surface states. The final stage in the adsorption process is characterized by the saturation of an acceptor surface state related to an optical transition at hv = 1.9 eV.

AB - This Communication describes a study concerning the interaction of molecular oxygen with a clean Ge(111)-c(2 × 8) surface. This reaction has been studied by in situ monitoring the ellipsometric reflection and the surface conductance. In order to explain the experimental results a model is proposed assuming a gradual disappearance of donor and acceptor surface states. The final stage in the adsorption process is characterized by the saturation of an acceptor surface state related to an optical transition at hv = 1.9 eV.

KW - IR-70155

U2 - 10.1016/0038-1098(88)90107-X

DO - 10.1016/0038-1098(88)90107-X

M3 - Article

SN - 0038-1098

VL - 65

SP - 1425

EP - 1427

JO - Solid state communications

JF - Solid state communications

IS - 11

ER -