The pressfet: an integrated electret-mosfet based pressure sensor

J.A. Voorthuyzen; P. Bergveld

doi:10.1016/0250-6874(88)80024-6

The pressfet: an integrated electret-mosfet based pressure sensor

J.A. Voorthuyzen, P. Bergveld

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Abstract

We present a new MOSFET-based pressure sensor, incorporating an air gap that is a function of pressure and a permanently charged dielectric layer (electret) between the gate and bulk of the MOS structure. In this way we obtain a MOSFET with a pre-charged variable gate capacitance. The theory of this sensor and the NMOS-compatible process for its realization are given. We present also the first experimental results on this new sensor. We have determined the characteristics of sensors with outer dimensions of 1 mm × 2 mm × 0.3 mm and measured a maximum sensitivity of about 10 mA/A/100 mm Hg, which is about ten times higher than the sensitivity of piezoresistive pressure sensors with comparable dimensions. Drawbacks of the present sensor design are a relatively high temperature sensitivity and a rather complex fabrication process.

Original language	English
Pages (from-to)	349-360
Journal	Sensors and actuators
Volume	14
Issue number	4
DOIs	https://doi.org/10.1016/0250-6874(88)80024-6
Publication status	Published - 1988

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title = "The pressfet: an integrated electret-mosfet based pressure sensor",

abstract = "We present a new MOSFET-based pressure sensor, incorporating an air gap that is a function of pressure and a permanently charged dielectric layer (electret) between the gate and bulk of the MOS structure. In this way we obtain a MOSFET with a pre-charged variable gate capacitance. The theory of this sensor and the NMOS-compatible process for its realization are given. We present also the first experimental results on this new sensor. We have determined the characteristics of sensors with outer dimensions of 1 mm × 2 mm × 0.3 mm and measured a maximum sensitivity of about 10 mA/A/100 mm Hg, which is about ten times higher than the sensitivity of piezoresistive pressure sensors with comparable dimensions. Drawbacks of the present sensor design are a relatively high temperature sensitivity and a rather complex fabrication process.",

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AU - Bergveld, P.

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AB - We present a new MOSFET-based pressure sensor, incorporating an air gap that is a function of pressure and a permanently charged dielectric layer (electret) between the gate and bulk of the MOS structure. In this way we obtain a MOSFET with a pre-charged variable gate capacitance. The theory of this sensor and the NMOS-compatible process for its realization are given. We present also the first experimental results on this new sensor. We have determined the characteristics of sensors with outer dimensions of 1 mm × 2 mm × 0.3 mm and measured a maximum sensitivity of about 10 mA/A/100 mm Hg, which is about ten times higher than the sensitivity of piezoresistive pressure sensors with comparable dimensions. Drawbacks of the present sensor design are a relatively high temperature sensitivity and a rather complex fabrication process.

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DO - 10.1016/0250-6874(88)80024-6

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VL - 14

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EP - 360

JO - Sensors and actuators

JF - Sensors and actuators

IS - 4

ER -

The pressfet: an integrated electret-mosfet based pressure sensor

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