The RF Charge Pump Technique for Measuring the Interface State Density on Leaky Dielectrics

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    Original languageUndefined
    Title of host publication8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005
    Place of PublicationVeldhoven, The Netherlands
    PublisherSTW
    Pages47-51
    Number of pages5
    ISBN (Print)90-73461-50-2
    Publication statusPublished - 17 Nov 2005
    Event8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005 - Veldhoven, Netherlands
    Duration: 17 Nov 200518 Nov 2005
    Conference number: 8

    Workshop

    Workshop8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period17/11/0518/11/05

    Keywords

    • METIS-225620

    Cite this

    Sasse, G. T., de Vries, H., & Schmitz, J. (2005). The RF Charge Pump Technique for Measuring the Interface State Density on Leaky Dielectrics. In 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (pp. 47-51). Veldhoven, The Netherlands: STW.
    Sasse, G.T. ; de Vries, Hendrikus ; Schmitz, Jurriaan. / The RF Charge Pump Technique for Measuring the Interface State Density on Leaky Dielectrics. 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005. Veldhoven, The Netherlands : STW, 2005. pp. 47-51
    @inproceedings{df2bd851dade40df85334ae6d9ca1cd4,
    title = "The RF Charge Pump Technique for Measuring the Interface State Density on Leaky Dielectrics",
    keywords = "METIS-225620",
    author = "G.T. Sasse and {de Vries}, Hendrikus and Jurriaan Schmitz",
    year = "2005",
    month = "11",
    day = "17",
    language = "Undefined",
    isbn = "90-73461-50-2",
    pages = "47--51",
    booktitle = "8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005",
    publisher = "STW",

    }

    Sasse, GT, de Vries, H & Schmitz, J 2005, The RF Charge Pump Technique for Measuring the Interface State Density on Leaky Dielectrics. in 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005. STW, Veldhoven, The Netherlands, pp. 47-51, 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005, Veldhoven, Netherlands, 17/11/05.

    The RF Charge Pump Technique for Measuring the Interface State Density on Leaky Dielectrics. / Sasse, G.T.; de Vries, Hendrikus; Schmitz, Jurriaan.

    8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005. Veldhoven, The Netherlands : STW, 2005. p. 47-51.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    TY - GEN

    T1 - The RF Charge Pump Technique for Measuring the Interface State Density on Leaky Dielectrics

    AU - Sasse, G.T.

    AU - de Vries, Hendrikus

    AU - Schmitz, Jurriaan

    PY - 2005/11/17

    Y1 - 2005/11/17

    KW - METIS-225620

    M3 - Conference contribution

    SN - 90-73461-50-2

    SP - 47

    EP - 51

    BT - 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005

    PB - STW

    CY - Veldhoven, The Netherlands

    ER -

    Sasse GT, de Vries H, Schmitz J. The RF Charge Pump Technique for Measuring the Interface State Density on Leaky Dielectrics. In 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005. Veldhoven, The Netherlands: STW. 2005. p. 47-51