The RF charge pump technique for measuring the interface state density on leaky dielectrics

G.T. Sasse, Hendrikus de Vries, Henk Vries, Jurriaan Schmitz

    Research output: Contribution to conferencePaper

    Abstract

    In this work the RF charge pump technique is presented. It is shown that this technique can rovide charge pump data of devices that have a leakage current too high for classical charge pump measurements. The methodology of accurately performing RF charge pump measurements is discussed and measurement results on devices with both a very high leakage current and moderate leakage current are shown. Charge pump data obtained at frequencies of up to 2 GHz are shown. It is verified that the RF charge pump data can indeed be used for extracting the interface state density and it is also investigated how this extraction can be performed accurately.
    Original languageUndefined
    Pages47-51
    Number of pages5
    Publication statusPublished - Nov 2005
    Event8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005 - Veldhoven, Netherlands
    Duration: 17 Nov 200518 Nov 2005
    Conference number: 8

    Workshop

    Workshop8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period17/11/0518/11/05

    Keywords

    • IR-67720
    • Charge Pumping
    • RF
    • MOS devices
    • tunneling current
    • thin gate oxides
    • EWI-15519

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