The RF charge pump technique for measuring the interface state density on leaky dielectrics

G.T. Sasse; Hendrikus de Vries; Henk Vries; Jurriaan Schmitz

The RF charge pump technique for measuring the interface state density on leaky dielectrics

G.T. Sasse, Hendrikus de Vries, Henk Vries, Jurriaan Schmitz

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Abstract

In this work the RF charge pump technique is presented. It is shown that this technique can rovide charge pump data of devices that have a leakage current too high for classical charge pump measurements. The methodology of accurately performing RF charge pump measurements is discussed and measurement results on devices with both a very high leakage current and moderate leakage current are shown. Charge pump data obtained at frequencies of up to 2 GHz are shown. It is verified that the RF charge pump data can indeed be used for extracting the interface state density and it is also investigated how this extraction can be performed accurately.

Original language	Undefined
Pages	47-51
Number of pages	5
Publication status	Published - Nov 2005
Event	8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005 - Veldhoven, Netherlands Duration: 17 Nov 2005 → 18 Nov 2005 Conference number: 8

Workshop

Workshop	8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005
Abbreviated title	SAFE
Country/Territory	Netherlands
City	Veldhoven
Period	17/11/05 → 18/11/05

Keywords

IR-67720
Charge Pumping
RF
MOS devices
tunneling current
thin gate oxides
EWI-15519

Access to Document

http://eprints.eemcs.utwente.nl/secure2/15519/01/sasse.pdf

Cite this

@conference{a72cea53594a476eb06fac1c1be0971a,

title = "The RF charge pump technique for measuring the interface state density on leaky dielectrics",

abstract = "In this work the RF charge pump technique is presented. It is shown that this technique can rovide charge pump data of devices that have a leakage current too high for classical charge pump measurements. The methodology of accurately performing RF charge pump measurements is discussed and measurement results on devices with both a very high leakage current and moderate leakage current are shown. Charge pump data obtained at frequencies of up to 2 GHz are shown. It is verified that the RF charge pump data can indeed be used for extracting the interface state density and it is also investigated how this extraction can be performed accurately.",

keywords = "IR-67720, Charge Pumping, RF, MOS devices, tunneling current, thin gate oxides, EWI-15519",

author = "G.T. Sasse and {de Vries}, Hendrikus and Henk Vries and Jurriaan Schmitz",

year = "2005",

month = nov,

language = "Undefined",

pages = "47--51",

note = "8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005 ; Conference date: 17-11-2005 Through 18-11-2005",

}

Sasse, GT, de Vries, H, Vries, H & Schmitz, J 2005, 'The RF charge pump technique for measuring the interface state density on leaky dielectrics', Paper presented at 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005, Veldhoven, Netherlands, 17/11/05 - 18/11/05 pp. 47-51. <http://eprints.eemcs.utwente.nl/secure2/15519/01/sasse.pdf>

TY - CONF

T1 - The RF charge pump technique for measuring the interface state density on leaky dielectrics

AU - Sasse, G.T.

AU - de Vries, Hendrikus

AU - Vries, Henk

AU - Schmitz, Jurriaan

N1 - Conference code: 8

PY - 2005/11

Y1 - 2005/11

N2 - In this work the RF charge pump technique is presented. It is shown that this technique can rovide charge pump data of devices that have a leakage current too high for classical charge pump measurements. The methodology of accurately performing RF charge pump measurements is discussed and measurement results on devices with both a very high leakage current and moderate leakage current are shown. Charge pump data obtained at frequencies of up to 2 GHz are shown. It is verified that the RF charge pump data can indeed be used for extracting the interface state density and it is also investigated how this extraction can be performed accurately.

AB - In this work the RF charge pump technique is presented. It is shown that this technique can rovide charge pump data of devices that have a leakage current too high for classical charge pump measurements. The methodology of accurately performing RF charge pump measurements is discussed and measurement results on devices with both a very high leakage current and moderate leakage current are shown. Charge pump data obtained at frequencies of up to 2 GHz are shown. It is verified that the RF charge pump data can indeed be used for extracting the interface state density and it is also investigated how this extraction can be performed accurately.

KW - IR-67720

KW - Charge Pumping

KW - RF

KW - MOS devices

KW - tunneling current

KW - thin gate oxides

KW - EWI-15519

M3 - Paper

SP - 47

EP - 51

T2 - 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005

Y2 - 17 November 2005 through 18 November 2005

ER -