The RF-CV method for characterization of leaky gate dielectrics

J. Schmitz, F.N. Cubaynes, R. de Kort, R.J. Havens, A.J. Scholten, L.F. Tiemeijer

    Research output: Contribution to journalConference articleAcademicpeer-review

    2 Citations (Scopus)
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    Abstract

    This paper presents a new method, developed for the capacitance–voltage (C–V) characterization of leaky dielectrics. The method comprises measurements in the gigahertz range on specially designed RF test structures. The method is verified against high-frequency C–V measurements on NMOS and PMOS structures. It yields reliable results even when the gate leakage is in excess of 100 A/cm2.
    Original languageEnglish
    Pages (from-to)149-153
    Number of pages5
    JournalMicroelectronic engineering
    Volume72
    Issue number10.1016/j.mee.2004.01.028
    DOIs
    Publication statusPublished - 3 Feb 2004
    Event13th Biannual Conference on Insulating Films on Semiconductors - Barcelona, Spain
    Duration: 18 Jun 200318 Jun 2003

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