The RF-CV method for characterization of leaky gate dielectrics

J. Schmitz; F.N. Cubaynes; R. de Kort; R.J. Havens; A.J. Scholten; L.F. Tiemeijer

doi:10.1016/j.mee.2004.01.028

The RF-CV method for characterization of leaky gate dielectrics

J. Schmitz, F.N. Cubaynes, R. de Kort, R.J. Havens, A.J. Scholten, L.F. Tiemeijer

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Abstract

This paper presents a new method, developed for the capacitance–voltage (C–V) characterization of leaky dielectrics. The method comprises measurements in the gigahertz range on specially designed RF test structures. The method is verified against high-frequency C–V measurements on NMOS and PMOS structures. It yields reliable results even when the gate leakage is in excess of 100 A/cm2.

Original language	English
Pages (from-to)	149-153
Number of pages	5
Journal	Microelectronic engineering
Volume	72
Issue number	10.1016/j.mee.2004.01.028
DOIs	https://doi.org/10.1016/j.mee.2004.01.028
Publication status	Published - 3 Feb 2004
Event	13th Biannual Conference on Insulating Films on Semiconductors - Barcelona, Spain Duration: 18 Jun 2003 → 18 Jun 2003

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title = "The RF-CV method for characterization of leaky gate dielectrics",

abstract = "This paper presents a new method, developed for the capacitance–voltage (C–V) characterization of leaky dielectrics. The method comprises measurements in the gigahertz range on specially designed RF test structures. The method is verified against high-frequency C–V measurements on NMOS and PMOS structures. It yields reliable results even when the gate leakage is in excess of 100 A/cm2.",

author = "J. Schmitz and F.N. Cubaynes and {de Kort}, R. and R.J. Havens and A.J. Scholten and L.F. Tiemeijer",

year = "2004",

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TY - JOUR

T1 - The RF-CV method for characterization of leaky gate dielectrics

AU - Schmitz, J.

AU - Cubaynes, F.N.

AU - de Kort, R.

AU - Havens, R.J.

AU - Scholten, A.J.

AU - Tiemeijer, L.F.

PY - 2004/2/3

Y1 - 2004/2/3

N2 - This paper presents a new method, developed for the capacitance–voltage (C–V) characterization of leaky dielectrics. The method comprises measurements in the gigahertz range on specially designed RF test structures. The method is verified against high-frequency C–V measurements on NMOS and PMOS structures. It yields reliable results even when the gate leakage is in excess of 100 A/cm2.

AB - This paper presents a new method, developed for the capacitance–voltage (C–V) characterization of leaky dielectrics. The method comprises measurements in the gigahertz range on specially designed RF test structures. The method is verified against high-frequency C–V measurements on NMOS and PMOS structures. It yields reliable results even when the gate leakage is in excess of 100 A/cm2.

U2 - 10.1016/j.mee.2004.01.028

DO - 10.1016/j.mee.2004.01.028

M3 - Conference article

VL - 72

SP - 149

EP - 153

JO - Microelectronic engineering

JF - Microelectronic engineering

SN - 0167-9317

IS - 10.1016/j.mee.2004.01.028

T2 - 13th Biannual Conference on Insulating Films on Semiconductors

Y2 - 18 June 2003 through 18 June 2003

ER -

The RF-CV method for characterization of leaky gate dielectrics

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