This paper presents a new method, developed for the capacitance–voltage (C–V) characterization of leaky dielectrics. The method comprises measurements in the gigahertz range on specially designed RF test structures. The method is verified against high-frequency C–V measurements on NMOS and PMOS structures. It yields reliable results even when the gate leakage is in excess of 100 A/cm2.
|Number of pages||5|
|Publication status||Published - 3 Feb 2004|
|Event||13th Biannual Conference on Insulating Films on Semiconductors - Barcelona, Spain|
Duration: 18 Jun 2003 → 18 Jun 2003