Abstract
Combining ferromagnetic and semiconductor materials is a challenging route to create new options for electronic devices in which the spin of the electron is employed. The spin-valve transistor (SVT) is the first of such hybrid devices shown to work successfully. This review describes the basic science and technology of the SVT and derived devices, such as the magnetic tunnel transistor.
| Original language | Undefined |
|---|---|
| Pages (from-to) | R289-R308 |
| Number of pages | 20 |
| Journal | Journal of physics D: applied physics |
| Volume | 36 |
| Issue number | 19 |
| DOIs | |
| Publication status | Published - 2003 |
Keywords
- IR-62969
- SMI-NE: From 2006 in EWI-NE
- METIS-213402
- EWI-5468