The spin-valve transistor: Fabrication, characterization and physics

R. Jansen; O.M.J. van 't Erve; S.D. Kim; R. Vlutters; P.S. Anil Kumar; J.C. Lodder

The spin-valve transistor: Fabrication, characterization and physics

R. Jansen, O.M.J. van 't Erve, S.D. Kim, R. Vlutters, P.S. Anil Kumar, J.C. Lodder

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

An overview is given of the fabrication, basic properties, and physics of the spin-valve transistor. We describe the layout of this three-terminal ferromagnet/semiconductor hybrid device, as well as the operating principle. Fabrication technologies are discussed, including vacuum metal bonding. We characterize properties of the device relevant for possible applications in magneto-electronics, such as relative magnetic response, output current, and noise behavior. Furthermore, we illustrate the unique possibilities of the spin-valve transistor for fundamental studies of the physics of hot-electron spin transport in magnetic thin film structures.

Original language	Undefined
Pages (from-to)	7431-7436
Number of pages	6
Journal	Journal of Applied Physics
Volume	89
Issue number	11
Publication status	Published - 2001

Keywords

SMI-NE: From 2006 in EWI-NE
IR-62968
EWI-5467
METIS-203817

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Cite this

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title = "The spin-valve transistor: Fabrication, characterization and physics",

abstract = "An overview is given of the fabrication, basic properties, and physics of the spin-valve transistor. We describe the layout of this three-terminal ferromagnet/semiconductor hybrid device, as well as the operating principle. Fabrication technologies are discussed, including vacuum metal bonding. We characterize properties of the device relevant for possible applications in magneto-electronics, such as relative magnetic response, output current, and noise behavior. Furthermore, we illustrate the unique possibilities of the spin-valve transistor for fundamental studies of the physics of hot-electron spin transport in magnetic thin film structures.",

keywords = "SMI-NE: From 2006 in EWI-NE, IR-62968, EWI-5467, METIS-203817",

author = "R. Jansen and {van 't Erve}, O.M.J. and S.D. Kim and R. Vlutters and {Anil Kumar}, P.S. and J.C. Lodder",

note = "Imported from SMI Reference manager",

year = "2001",

language = "Undefined",

volume = "89",

pages = "7431--7436",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "11",

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TY - JOUR

T1 - The spin-valve transistor: Fabrication, characterization and physics

AU - Jansen, R.

AU - van 't Erve, O.M.J.

AU - Kim, S.D.

AU - Vlutters, R.

AU - Anil Kumar, P.S.

AU - Lodder, J.C.

N1 - Imported from SMI Reference manager

PY - 2001

Y1 - 2001

N2 - An overview is given of the fabrication, basic properties, and physics of the spin-valve transistor. We describe the layout of this three-terminal ferromagnet/semiconductor hybrid device, as well as the operating principle. Fabrication technologies are discussed, including vacuum metal bonding. We characterize properties of the device relevant for possible applications in magneto-electronics, such as relative magnetic response, output current, and noise behavior. Furthermore, we illustrate the unique possibilities of the spin-valve transistor for fundamental studies of the physics of hot-electron spin transport in magnetic thin film structures.

AB - An overview is given of the fabrication, basic properties, and physics of the spin-valve transistor. We describe the layout of this three-terminal ferromagnet/semiconductor hybrid device, as well as the operating principle. Fabrication technologies are discussed, including vacuum metal bonding. We characterize properties of the device relevant for possible applications in magneto-electronics, such as relative magnetic response, output current, and noise behavior. Furthermore, we illustrate the unique possibilities of the spin-valve transistor for fundamental studies of the physics of hot-electron spin transport in magnetic thin film structures.

KW - SMI-NE: From 2006 in EWI-NE

KW - IR-62968

KW - EWI-5467

KW - METIS-203817

M3 - Article

VL - 89

SP - 7431

EP - 7436

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

ER -