The spin-valve transistor: Fabrication, characterization and physics

R. Jansen, O.M.J. van 't Erve, S.D. Kim, R. Vlutters, P.S. Anil Kumar, J.C. Lodder

    Research output: Contribution to journalArticleAcademicpeer-review

    21 Citations (Scopus)
    1 Downloads (Pure)


    An overview is given of the fabrication, basic properties, and physics of the spin-valve transistor. We describe the layout of this three-terminal ferromagnet/semiconductor hybrid device, as well as the operating principle. Fabrication technologies are discussed, including vacuum metal bonding. We characterize properties of the device relevant for possible applications in magneto-electronics, such as relative magnetic response, output current, and noise behavior. Furthermore, we illustrate the unique possibilities of the spin-valve transistor for fundamental studies of the physics of hot-electron spin transport in magnetic thin film structures.
    Original languageUndefined
    Pages (from-to)7431-7436
    Number of pages6
    JournalJournal of Applied Physics
    Issue number11
    Publication statusPublished - 2001


    • SMI-NE: From 2006 in EWI-NE
    • IR-62968
    • EWI-5467
    • METIS-203817

    Cite this