An overview is given of the fabrication, basic properties, and physics of the spin-valve transistor. We describe the layout of this three-terminal ferromagnet/semiconductor hybrid device, as well as the operating principle. Fabrication technologies are discussed, including vacuum metal bonding. We characterize properties of the device relevant for possible applications in magneto-electronics, such as relative magnetic response, output current, and noise behavior. Furthermore, we illustrate the unique possibilities of the spin-valve transistor for fundamental studies of the physics of hot-electron spin transport in magnetic thin film structures.
|Number of pages||6|
|Journal||Journal of Applied Physics|
|Publication status||Published - 2001|
- SMI-NE: From 2006 in EWI-NE
Jansen, R., van 't Erve, O. M. J., Kim, S. D., Vlutters, R., Anil Kumar, P. S., & Lodder, J. C. (2001). The spin-valve transistor: Fabrication, characterization and physics. Journal of Applied Physics, 89(11), 7431-7436.