Abstract
An overview is given of the fabrication, basic properties, and physics of the spin-valve transistor. We describe the layout of this three-terminal ferromagnet/semiconductor hybrid device, as well as the operating principle. Fabrication technologies are discussed, including vacuum metal bonding. We characterize properties of the device relevant for possible applications in magneto-electronics, such as relative magnetic response, output current, and noise behavior. Furthermore, we illustrate the unique possibilities of the spin-valve transistor for fundamental studies of the physics of hot-electron spin transport in magnetic thin film structures.
| Original language | Undefined |
|---|---|
| Pages (from-to) | 7431-7436 |
| Number of pages | 6 |
| Journal | Journal of Applied Physics |
| Volume | 89 |
| Issue number | 11 |
| Publication status | Published - 2001 |
Keywords
- SMI-NE: From 2006 in EWI-NE
- IR-62968
- EWI-5467
- METIS-203817