The spinvalve transistor: technologies and progress

J.C. Lodder, D.J. Monsma, R. Vlutters, T. Shimatsu, T. Shimatsu

    Research output: Contribution to journalArticleAcademicpeer-review

    18 Citations (Scopus)

    Abstract

    The paper describes the necessary technologies needed for realising a RT operating spin-valve transistor (SVT) which is in fact a magnetic controlled metal base transistor. The preparation of a 350×350 μm2 SVT consisting of an Si emitter and collector and Co/Cu/Co GMR multilayer are described. The metal bonding technology in vacuum is described, which is essential for preparing small SVTs with photolithography and etching technologies. The quality of the bonding interfaces as well as the interface between GMR layer and semiconductor are important for the electrical properties. In more general terms the SVT research also establishes the feasibility of various hybrid structures combining semiconductor technology and spin electronics.
    Original languageUndefined
    Pages (from-to)119-124
    Number of pages6
    JournalJournal of magnetism and magnetic materials
    Volume198-19
    Issue number198-199
    DOIs
    Publication statusPublished - 1999

    Keywords

    • METIS-111927
    • CPP-GMR
    • IR-63010
    • Spin-valve effect
    • Spin-valve transistor
    • Metal bonding technology
    • EWI-5579
    • SMI-SPINTRONICS
    • SMI-NE: From 2006 in EWI-NE

    Cite this

    Lodder, J. C., Monsma, D. J., Vlutters, R., Shimatsu, T., & Shimatsu, T. (1999). The spinvalve transistor: technologies and progress. Journal of magnetism and magnetic materials, 198-19(198-199), 119-124. https://doi.org/10.1016/S0304-8853(98)01241-4
    Lodder, J.C. ; Monsma, D.J. ; Vlutters, R. ; Shimatsu, T. ; Shimatsu, T. / The spinvalve transistor: technologies and progress. In: Journal of magnetism and magnetic materials. 1999 ; Vol. 198-19, No. 198-199. pp. 119-124.
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    abstract = "The paper describes the necessary technologies needed for realising a RT operating spin-valve transistor (SVT) which is in fact a magnetic controlled metal base transistor. The preparation of a 350×350 μm2 SVT consisting of an Si emitter and collector and Co/Cu/Co GMR multilayer are described. The metal bonding technology in vacuum is described, which is essential for preparing small SVTs with photolithography and etching technologies. The quality of the bonding interfaces as well as the interface between GMR layer and semiconductor are important for the electrical properties. In more general terms the SVT research also establishes the feasibility of various hybrid structures combining semiconductor technology and spin electronics.",
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    Lodder, JC, Monsma, DJ, Vlutters, R, Shimatsu, T & Shimatsu, T 1999, 'The spinvalve transistor: technologies and progress', Journal of magnetism and magnetic materials, vol. 198-19, no. 198-199, pp. 119-124. https://doi.org/10.1016/S0304-8853(98)01241-4

    The spinvalve transistor: technologies and progress. / Lodder, J.C.; Monsma, D.J.; Vlutters, R.; Shimatsu, T.; Shimatsu, T.

    In: Journal of magnetism and magnetic materials, Vol. 198-19, No. 198-199, 1999, p. 119-124.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - The spinvalve transistor: technologies and progress

    AU - Lodder, J.C.

    AU - Monsma, D.J.

    AU - Vlutters, R.

    AU - Shimatsu, T.

    AU - Shimatsu, T.

    N1 - Imported from SMI Reference manager

    PY - 1999

    Y1 - 1999

    N2 - The paper describes the necessary technologies needed for realising a RT operating spin-valve transistor (SVT) which is in fact a magnetic controlled metal base transistor. The preparation of a 350×350 μm2 SVT consisting of an Si emitter and collector and Co/Cu/Co GMR multilayer are described. The metal bonding technology in vacuum is described, which is essential for preparing small SVTs with photolithography and etching technologies. The quality of the bonding interfaces as well as the interface between GMR layer and semiconductor are important for the electrical properties. In more general terms the SVT research also establishes the feasibility of various hybrid structures combining semiconductor technology and spin electronics.

    AB - The paper describes the necessary technologies needed for realising a RT operating spin-valve transistor (SVT) which is in fact a magnetic controlled metal base transistor. The preparation of a 350×350 μm2 SVT consisting of an Si emitter and collector and Co/Cu/Co GMR multilayer are described. The metal bonding technology in vacuum is described, which is essential for preparing small SVTs with photolithography and etching technologies. The quality of the bonding interfaces as well as the interface between GMR layer and semiconductor are important for the electrical properties. In more general terms the SVT research also establishes the feasibility of various hybrid structures combining semiconductor technology and spin electronics.

    KW - METIS-111927

    KW - CPP-GMR

    KW - IR-63010

    KW - Spin-valve effect

    KW - Spin-valve transistor

    KW - Metal bonding technology

    KW - EWI-5579

    KW - SMI-SPINTRONICS

    KW - SMI-NE: From 2006 in EWI-NE

    U2 - 10.1016/S0304-8853(98)01241-4

    DO - 10.1016/S0304-8853(98)01241-4

    M3 - Article

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    EP - 124

    JO - Journal of magnetism and magnetic materials

    JF - Journal of magnetism and magnetic materials

    SN - 0304-8853

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    ER -