Abstract
| Original language | Undefined |
|---|---|
| Pages (from-to) | 119-124 |
| Number of pages | 6 |
| Journal | Journal of magnetism and magnetic materials |
| Volume | 198-19 |
| Issue number | 198-199 |
| DOIs | |
| Publication status | Published - 1999 |
Keywords
- METIS-111927
- CPP-GMR
- IR-63010
- Spin-valve effect
- Spin-valve transistor
- Metal bonding technology
- EWI-5579
- SMI-SPINTRONICS
- SMI-NE: From 2006 in EWI-NE
Cite this
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The spinvalve transistor: technologies and progress. / Lodder, J.C.; Monsma, D.J.; Vlutters, R.; Shimatsu, T.; Shimatsu, T.
In: Journal of magnetism and magnetic materials, Vol. 198-19, No. 198-199, 1999, p. 119-124.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - The spinvalve transistor: technologies and progress
AU - Lodder, J.C.
AU - Monsma, D.J.
AU - Vlutters, R.
AU - Shimatsu, T.
AU - Shimatsu, T.
N1 - Imported from SMI Reference manager
PY - 1999
Y1 - 1999
N2 - The paper describes the necessary technologies needed for realising a RT operating spin-valve transistor (SVT) which is in fact a magnetic controlled metal base transistor. The preparation of a 350×350 μm2 SVT consisting of an Si emitter and collector and Co/Cu/Co GMR multilayer are described. The metal bonding technology in vacuum is described, which is essential for preparing small SVTs with photolithography and etching technologies. The quality of the bonding interfaces as well as the interface between GMR layer and semiconductor are important for the electrical properties. In more general terms the SVT research also establishes the feasibility of various hybrid structures combining semiconductor technology and spin electronics.
AB - The paper describes the necessary technologies needed for realising a RT operating spin-valve transistor (SVT) which is in fact a magnetic controlled metal base transistor. The preparation of a 350×350 μm2 SVT consisting of an Si emitter and collector and Co/Cu/Co GMR multilayer are described. The metal bonding technology in vacuum is described, which is essential for preparing small SVTs with photolithography and etching technologies. The quality of the bonding interfaces as well as the interface between GMR layer and semiconductor are important for the electrical properties. In more general terms the SVT research also establishes the feasibility of various hybrid structures combining semiconductor technology and spin electronics.
KW - METIS-111927
KW - CPP-GMR
KW - IR-63010
KW - Spin-valve effect
KW - Spin-valve transistor
KW - Metal bonding technology
KW - EWI-5579
KW - SMI-SPINTRONICS
KW - SMI-NE: From 2006 in EWI-NE
U2 - 10.1016/S0304-8853(98)01241-4
DO - 10.1016/S0304-8853(98)01241-4
M3 - Article
VL - 198-19
SP - 119
EP - 124
JO - Journal of magnetism and magnetic materials
JF - Journal of magnetism and magnetic materials
SN - 0304-8853
IS - 198-199
ER -