The paper describes the necessary technologies needed for realising a RT operating spin-valve transistor (SVT) which is in fact a magnetic controlled metal base transistor. The preparation of a 350×350 μm2 SVT consisting of an Si emitter and collector and Co/Cu/Co GMR multilayer are described. The metal bonding technology in vacuum is described, which is essential for preparing small SVTs with photolithography and etching technologies. The quality of the bonding interfaces as well as the interface between GMR layer and semiconductor are important for the electrical properties. In more general terms the SVT research also establishes the feasibility of various hybrid structures combining semiconductor technology and spin electronics.
- Spin-valve effect
- Spin-valve transistor
- Metal bonding technology
- SMI-NE: From 2006 in EWI-NE
Lodder, J. C., Monsma, D. J., Vlutters, R., Shimatsu, T., & Shimatsu, T. (1999). The spinvalve transistor: technologies and progress. Journal of magnetism and magnetic materials, 198-19(198-199), 119-124. https://doi.org/10.1016/S0304-8853(98)01241-4