The state-of-the-art of RF capacitive tunable components (invited)

Cong Huang*, Koen Buisman, Lis K. Nanver, Leo C N De Vreede

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Abstract

An overview is given for the current state-of-the-art of tunable RF elements. For this purpose, tunable RF elements such as thin-film Barium Strontium Titanate (BST) varactors, MicroElectroMechanical Systems (MEMS) based capacitive switch banks and varactors, as well as semiconductor based capacitive switch banks and varactors are reviewed. Their benefits and shortcomings are discussed and compared for various applications.

Original languageEnglish
Title of host publicationICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages619-622
Number of pages4
DOIs
Publication statusPublished - 1 Dec 2010
Externally publishedYes
Event10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010 - Shanghai, China
Duration: 1 Nov 20104 Nov 2010
Conference number: 10

Conference

Conference10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010
CountryChina
CityShanghai
Period1/11/104/11/10

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Cite this

Huang, C., Buisman, K., Nanver, L. K., & De Vreede, L. C. N. (2010). The state-of-the-art of RF capacitive tunable components (invited). In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 619-622). [5667304] https://doi.org/10.1109/ICSICT.2010.5667304