The state-of-the-art of RF capacitive tunable components (invited)

Cong Huang; Koen Buisman; Lis K. Nanver; Leo C N De Vreede

doi:10.1109/ICSICT.2010.5667304

The state-of-the-art of RF capacitive tunable components (invited)

Cong Huang^*
, Koen Buisman
, Lis K. Nanver
, Leo C N De Vreede

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

Abstract

An overview is given for the current state-of-the-art of tunable RF elements. For this purpose, tunable RF elements such as thin-film Barium Strontium Titanate (BST) varactors, MicroElectroMechanical Systems (MEMS) based capacitive switch banks and varactors, as well as semiconductor based capacitive switch banks and varactors are reviewed. Their benefits and shortcomings are discussed and compared for various applications.

Original language	English
Title of host publication	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages	619-622
Number of pages	4
DOIs	https://doi.org/10.1109/ICSICT.2010.5667304
Publication status	Published - 1 Dec 2010
Externally published	Yes
Event	10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010 - Shanghai, China Duration: 1 Nov 2010 → 4 Nov 2010 Conference number: 10

Conference

Conference	10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010
Country/Territory	China
City	Shanghai
Period	1/11/10 → 4/11/10

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10.1109/ICSICT.2010.5667304

Cite this

@inproceedings{7bb633f986f94e1aacef008b9b86b959,

title = "The state-of-the-art of RF capacitive tunable components (invited)",

abstract = "An overview is given for the current state-of-the-art of tunable RF elements. For this purpose, tunable RF elements such as thin-film Barium Strontium Titanate (BST) varactors, MicroElectroMechanical Systems (MEMS) based capacitive switch banks and varactors, as well as semiconductor based capacitive switch banks and varactors are reviewed. Their benefits and shortcomings are discussed and compared for various applications.",

author = "Cong Huang and Koen Buisman and Nanver, \{Lis K.\} and \{De Vreede\}, \{Leo C N\}",

year = "2010",

month = dec,

day = "1",

doi = "10.1109/ICSICT.2010.5667304",

language = "English",

isbn = "9781424457984",

pages = "619--622",

booktitle = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010 ; Conference date: 01-11-2010 Through 04-11-2010",

}

Huang, C, Buisman, K, Nanver, LK & De Vreede, LCN 2010, The state-of-the-art of RF capacitive tunable components (invited). in ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 5667304, pp. 619-622, 10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010, Shanghai, China, 1/11/10. https://doi.org/10.1109/ICSICT.2010.5667304

The state-of-the-art of RF capacitive tunable components (invited). / Huang, Cong; Buisman, Koen; Nanver, Lis K. et al.
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 619-622 5667304.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

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AU - Huang, Cong

AU - Buisman, Koen

AU - Nanver, Lis K.

AU - De Vreede, Leo C N

N1 - Conference code: 10

PY - 2010/12/1

Y1 - 2010/12/1

N2 - An overview is given for the current state-of-the-art of tunable RF elements. For this purpose, tunable RF elements such as thin-film Barium Strontium Titanate (BST) varactors, MicroElectroMechanical Systems (MEMS) based capacitive switch banks and varactors, as well as semiconductor based capacitive switch banks and varactors are reviewed. Their benefits and shortcomings are discussed and compared for various applications.

AB - An overview is given for the current state-of-the-art of tunable RF elements. For this purpose, tunable RF elements such as thin-film Barium Strontium Titanate (BST) varactors, MicroElectroMechanical Systems (MEMS) based capacitive switch banks and varactors, as well as semiconductor based capacitive switch banks and varactors are reviewed. Their benefits and shortcomings are discussed and compared for various applications.

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U2 - 10.1109/ICSICT.2010.5667304

DO - 10.1109/ICSICT.2010.5667304

M3 - Conference contribution

AN - SCOPUS:78751561351

SN - 9781424457984

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BT - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

T2 - 10th IEEE International Conference on Solid-State and Integrated Circuit Technology 2010

Y2 - 1 November 2010 through 4 November 2010

ER -

The state-of-the-art of RF capacitive tunable components (invited)

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