The Ti/c-Si solid state reaction : I. An ellipsometrical study

J.M.M. de Nijs; Arend van Silfhout

doi:10.1016/0169-4332(90)90033-V

The Ti/c-Si solid state reaction : I. An ellipsometrical study

J.M.M. de Nijs, Arend van Silfhout

Research output: Contribution to journal › Article › Academic

10 Citations (Scopus)

37 Downloads (Pure)

Abstract

This paper is the first of a series of three articles in which we present the results and analyses of an extended study of the c-Si/Ti solid state reaction. In this paper we will discuss the spectroscopic ellipsometric investigation. Thin (≈10nm) Ti films are grown on clean Si(111) surfaces and are subsequently heated. The Si indiffusion and the Si-Ti intermixing are continuously registered by three-wavelengths ellipsometry. Two metastable intermediate phases are observed to form before the final state is obtained Spectroscopic ellipsometry (E = 2−4.5 eV) is used to characterize the as-deposited layer, the metastable intermediate phase and the final state. Analysis of these spectra shows that: (1) Si and Ti intermix during the initial Ti deposition, (2) a fast reordering of the Ti atoms occurs when the system is slightly heated (≈175°C), (3) a metastable, probably monosilicide phase with a large Si concentration gradient is obtained at ≈350°C, (4) a homogeneous metastable TiSi2 forms at ≈450°C, at ≈700°C a roughened TiSi2 layer with a surplus of c-Si is formed.

Original language	Undefined
Pages (from-to)	333-347
Journal	Applied surface science
Volume	40
Issue number	4
DOIs	https://doi.org/10.1016/0169-4332(90)90033-V
Publication status	Published - 1990

Keywords

IR-70624

Access to Document

10.1016/0169-4332(90)90033-V

Nijs90solid
open

Cite this

de Nijs, J. M. M., & van Silfhout, A. (1990). The Ti/c-Si solid state reaction : I. An ellipsometrical study. Applied surface science, 40(4), 333-347. https://doi.org/10.1016/0169-4332(90)90033-V

@article{cef5233aed2f49aba87d2575bfffdcc7,

title = "The Ti/c-Si solid state reaction : I. An ellipsometrical study",

abstract = "This paper is the first of a series of three articles in which we present the results and analyses of an extended study of the c-Si/Ti solid state reaction. In this paper we will discuss the spectroscopic ellipsometric investigation. Thin (≈10nm) Ti films are grown on clean Si(111) surfaces and are subsequently heated. The Si indiffusion and the Si-Ti intermixing are continuously registered by three-wavelengths ellipsometry. Two metastable intermediate phases are observed to form before the final state is obtained Spectroscopic ellipsometry (E = 2−4.5 eV) is used to characterize the as-deposited layer, the metastable intermediate phase and the final state. Analysis of these spectra shows that: (1) Si and Ti intermix during the initial Ti deposition, (2) a fast reordering of the Ti atoms occurs when the system is slightly heated (≈175°C), (3) a metastable, probably monosilicide phase with a large Si concentration gradient is obtained at ≈350°C, (4) a homogeneous metastable TiSi2 forms at ≈450°C, at ≈700°C a roughened TiSi2 layer with a surplus of c-Si is formed.",

keywords = "IR-70624",

author = "{de Nijs}, J.M.M. and {van Silfhout}, Arend",

year = "1990",

doi = "10.1016/0169-4332(90)90033-V",

language = "Undefined",

volume = "40",

pages = "333--347",

journal = "Applied surface science",

issn = "0169-4332",

publisher = "Elsevier",

number = "4",

}

TY - JOUR

T1 - The Ti/c-Si solid state reaction : I. An ellipsometrical study

AU - de Nijs, J.M.M.

AU - van Silfhout, Arend

PY - 1990

Y1 - 1990

N2 - This paper is the first of a series of three articles in which we present the results and analyses of an extended study of the c-Si/Ti solid state reaction. In this paper we will discuss the spectroscopic ellipsometric investigation. Thin (≈10nm) Ti films are grown on clean Si(111) surfaces and are subsequently heated. The Si indiffusion and the Si-Ti intermixing are continuously registered by three-wavelengths ellipsometry. Two metastable intermediate phases are observed to form before the final state is obtained Spectroscopic ellipsometry (E = 2−4.5 eV) is used to characterize the as-deposited layer, the metastable intermediate phase and the final state. Analysis of these spectra shows that: (1) Si and Ti intermix during the initial Ti deposition, (2) a fast reordering of the Ti atoms occurs when the system is slightly heated (≈175°C), (3) a metastable, probably monosilicide phase with a large Si concentration gradient is obtained at ≈350°C, (4) a homogeneous metastable TiSi2 forms at ≈450°C, at ≈700°C a roughened TiSi2 layer with a surplus of c-Si is formed.

AB - This paper is the first of a series of three articles in which we present the results and analyses of an extended study of the c-Si/Ti solid state reaction. In this paper we will discuss the spectroscopic ellipsometric investigation. Thin (≈10nm) Ti films are grown on clean Si(111) surfaces and are subsequently heated. The Si indiffusion and the Si-Ti intermixing are continuously registered by three-wavelengths ellipsometry. Two metastable intermediate phases are observed to form before the final state is obtained Spectroscopic ellipsometry (E = 2−4.5 eV) is used to characterize the as-deposited layer, the metastable intermediate phase and the final state. Analysis of these spectra shows that: (1) Si and Ti intermix during the initial Ti deposition, (2) a fast reordering of the Ti atoms occurs when the system is slightly heated (≈175°C), (3) a metastable, probably monosilicide phase with a large Si concentration gradient is obtained at ≈350°C, (4) a homogeneous metastable TiSi2 forms at ≈450°C, at ≈700°C a roughened TiSi2 layer with a surplus of c-Si is formed.

KW - IR-70624

U2 - 10.1016/0169-4332(90)90033-V

DO - 10.1016/0169-4332(90)90033-V

M3 - Article

VL - 40

SP - 333

EP - 347

JO - Applied surface science

JF - Applied surface science

SN - 0169-4332

IS - 4

ER -