The Time-Voltage Trade-off for ESD Damage Threshold in Amorphous Silicon Hydrogenated Thin-film Transistors

N. Golo-Tosic, S. van der Wal, F.G. Kuper, A.J. Mouthaan

Research output: Contribution to journal › Article › Academic › peer-review

Original language	Undefined
Pages (from-to)	1391-1396
Number of pages	6
Journal	Microelectronics reliability
Volume	41
Issue number	9-10
Publication status	Published - 2001

Keywords

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title = "The Time-Voltage Trade-off for ESD Damage Threshold in Amorphous Silicon Hydrogenated Thin-film Transistors",

keywords = "METIS-201443",

author = "N. Golo-Tosic and {van der Wal}, S. and F.G. Kuper and A.J. Mouthaan",

year = "2001",

language = "Undefined",

volume = "41",

pages = "1391--1396",

journal = "Microelectronics reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd",

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TY - JOUR

T1 - The Time-Voltage Trade-off for ESD Damage Threshold in Amorphous Silicon Hydrogenated Thin-film Transistors

AU - Golo-Tosic, N.

AU - van der Wal, S.

AU - Kuper, F.G.

AU - Mouthaan, A.J.

PY - 2001

Y1 - 2001

KW - METIS-201443

M3 - Article

SN - 0026-2714

VL - 41

SP - 1391

EP - 1396

JO - Microelectronics reliability

JF - Microelectronics reliability

IS - 9-10

ER -