The Time-Voltage Trade-off for ESD Damage Threshold in Amorphous Silicon Hydrogenated Thin-film Transistors

N. Golo-Tosic, S. van der Wal, F.G. Kuper, A.J. Mouthaan

    Research output: Contribution to journalArticleAcademicpeer-review

    Original languageUndefined
    Pages (from-to)1391-1396
    Number of pages6
    JournalMicroelectronics reliability
    Volume41
    Issue number9-10
    Publication statusPublished - 2001

    Keywords

    • METIS-201443

    Cite this

    Golo-Tosic, N., van der Wal, S., Kuper, F. G., & Mouthaan, A. J. (2001). The Time-Voltage Trade-off for ESD Damage Threshold in Amorphous Silicon Hydrogenated Thin-film Transistors. Microelectronics reliability, 41(9-10), 1391-1396.