The time-voltage trade-off for ESD damage threshold in amorphous silicon hydrogenated thin film transistors

N. Golo-Tosic; S. van der Wal; F.G. Kuper; A.J. Mouthaan

doi:10.1016/S0026-2714(01)00148-2

The time-voltage trade-off for ESD damage threshold in amorphous silicon hydrogenated thin film transistors

N. Golo-Tosic, S. van der Wal, F.G. Kuper, A.J. Mouthaan

Research output: Contribution to journal › Article › Academic › peer-review

4 Citations (Scopus)

Abstract

It is investigated whether damage or breakdown of the amorphous silicon thin film transistors (alpha-Si:H TFT's) under pulsed stress depends on the stress time. The drain of grounded gate TFT's has been stressed applying repeated square voltage pulses of different duration (100ns to 10s). The evolution and the mechanisms of the pre-breakdown degradation will be presented and discussed. Finally, the temperature distribution across an alpha-Si:H TFT under applied stress will be simulated by means of coupled electro-thermal simulations.

Original language	Undefined
Article number	10.1016/S0026-2714(01)00148-2
Pages (from-to)	1391-1396
Number of pages	6
Journal	Microelectronics reliability
Volume	41
Issue number	9-10
DOIs	https://doi.org/10.1016/S0026-2714(01)00148-2
Publication status	Published - 1 Oct 2001

Keywords

IR-67774
EWI-15618

Access to Document

10.1016/S0026-2714(01)00148-2

http://eprints.eemcs.utwente.nl/secure2/15618/01/tosic_micr_eng.pdf

Cite this

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title = "The time-voltage trade-off for ESD damage threshold in amorphous silicon hydrogenated thin film transistors",

abstract = "It is investigated whether damage or breakdown of the amorphous silicon thin film transistors (alpha-Si:H TFT's) under pulsed stress depends on the stress time. The drain of grounded gate TFT's has been stressed applying repeated square voltage pulses of different duration (100ns to 10s). The evolution and the mechanisms of the pre-breakdown degradation will be presented and discussed. Finally, the temperature distribution across an alpha-Si:H TFT under applied stress will be simulated by means of coupled electro-thermal simulations.",

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AU - van der Wal, S.

AU - Kuper, F.G.

AU - Mouthaan, A.J.

PY - 2001/10/1

Y1 - 2001/10/1

N2 - It is investigated whether damage or breakdown of the amorphous silicon thin film transistors (alpha-Si:H TFT's) under pulsed stress depends on the stress time. The drain of grounded gate TFT's has been stressed applying repeated square voltage pulses of different duration (100ns to 10s). The evolution and the mechanisms of the pre-breakdown degradation will be presented and discussed. Finally, the temperature distribution across an alpha-Si:H TFT under applied stress will be simulated by means of coupled electro-thermal simulations.

AB - It is investigated whether damage or breakdown of the amorphous silicon thin film transistors (alpha-Si:H TFT's) under pulsed stress depends on the stress time. The drain of grounded gate TFT's has been stressed applying repeated square voltage pulses of different duration (100ns to 10s). The evolution and the mechanisms of the pre-breakdown degradation will be presented and discussed. Finally, the temperature distribution across an alpha-Si:H TFT under applied stress will be simulated by means of coupled electro-thermal simulations.

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U2 - 10.1016/S0026-2714(01)00148-2

DO - 10.1016/S0026-2714(01)00148-2

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