The trade-off between tuning ratio and quality factor of BaxSr1-xTiO3 MIM capacitors on alumina substrates

M.P.J. Tiggelman; K. Reimann; J. Liu; M. Klee; R. Mauczok; W. Keur; Jurriaan Schmitz; Raymond Josephus Engelbart Hueting

The trade-off between tuning ratio and quality factor of Ba_xSr_1-xTiO₃ MIM capacitors on alumina substrates

M.P.J. Tiggelman, K. Reimann, J. Liu, M. Klee, R. Mauczok, W. Keur, Jurriaan Schmitz, Raymond Josephus Engelbart Hueting

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Downloads (Pure)

Abstract

Barium strontium titanate with different compositions is deposited using wet-chemical processing on a glass planarization layer, on top of alumina substrates. Three samples were fabricated with BaxSr1-xTiO3 (BST) with the barium content x varying between 0.8 and 1. The poly-crystalline films are 530 ± 12 nm thick. The optimization in terms of permittivity and quality factor is explored for barium strontium titanate on alumina substrates. The trade-off between the permittivity and quality factor (at 1 GHz) is investigated. Our results show that wet-chemical processing on glass-planarized alumina results in a quality factor between 21–27 at 1 GHz and a tuning ratio from 1.8 to 2.0 at an electric field of 0.4 MV/cm.

Original language	Undefined
Title of host publication	Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)
Place of Publication	Utrecht, The Netherlands
Publisher	STW
Pages	506-508
Number of pages	3
ISBN (Print)	978-90-73461-56-7
Publication status	Published - 27 Nov 2008
Event	11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008 - Veldhoven, Netherlands Duration: 27 Nov 2008 → 28 Nov 2008 Conference number: 11

Publication series

Name
Publisher	Technology Foundation STW
Number	WoTUG-31

Workshop

Workshop	11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008
Abbreviated title	SAFE
Country/Territory	Netherlands
City	Veldhoven
Period	27/11/08 → 28/11/08

Keywords

EWI-14615
METIS-255006
IR-62614
SC-ICF: Integrated Circuit Fabrication

Access to Document

http://eprints.eemcs.utwente.nl/secure2/14615/01/tiggelman.pdf

Cite this

Tiggelman, M. P. J., Reimann, K., Liu, J., Klee, M., Mauczok, R., Keur, W., Schmitz, J., & Hueting, R. J. E. (2008). The trade-off between tuning ratio and quality factor of Ba_xSr_1-xTiO₃ MIM capacitors on alumina substrates. In Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008) (pp. 506-508). STW. http://eprints.eemcs.utwente.nl/secure2/14615/01/tiggelman.pdf

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title = "The trade-off between tuning ratio and quality factor of BaxSr1-xTiO3 MIM capacitors on alumina substrates",

abstract = "Barium strontium titanate with different compositions is deposited using wet-chemical processing on a glass planarization layer, on top of alumina substrates. Three samples were fabricated with BaxSr1-xTiO3 (BST) with the barium content x varying between 0.8 and 1. The poly-crystalline films are 530 ± 12 nm thick. The optimization in terms of permittivity and quality factor is explored for barium strontium titanate on alumina substrates. The trade-off between the permittivity and quality factor (at 1 GHz) is investigated. Our results show that wet-chemical processing on glass-planarized alumina results in a quality factor between 21–27 at 1 GHz and a tuning ratio from 1.8 to 2.0 at an electric field of 0.4 MV/cm.",

keywords = "EWI-14615, METIS-255006, IR-62614, SC-ICF: Integrated Circuit Fabrication",

author = "M.P.J. Tiggelman and K. Reimann and J. Liu and M. Klee and R. Mauczok and W. Keur and Jurriaan Schmitz and Hueting, {Raymond Josephus Engelbart}",

year = "2008",

month = nov,

day = "27",

language = "Undefined",

isbn = "978-90-73461-56-7",

publisher = "STW",

number = "WoTUG-31",

pages = "506--508",

booktitle = "Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)",

note = "11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008 ; Conference date: 27-11-2008 Through 28-11-2008",

}

Tiggelman, MPJ, Reimann, K, Liu, J, Klee, M, Mauczok, R, Keur, W, Schmitz, J & Hueting, RJE 2008, The trade-off between tuning ratio and quality factor of Ba_xSr_1-xTiO₃ MIM capacitors on alumina substrates. in Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008). STW, Utrecht, The Netherlands, pp. 506-508, 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008, Veldhoven, Netherlands, 27/11/08. <http://eprints.eemcs.utwente.nl/secure2/14615/01/tiggelman.pdf>

The trade-off between tuning ratio and quality factor of Ba_xSr_1-xTiO₃ MIM capacitors on alumina substrates. / Tiggelman, M.P.J.; Reimann, K.; Liu, J. et al.
Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008). Utrecht, The Netherlands: STW, 2008. p. 506-508.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - The trade-off between tuning ratio and quality factor of BaxSr1-xTiO3 MIM capacitors on alumina substrates

AU - Tiggelman, M.P.J.

AU - Reimann, K.

AU - Liu, J.

AU - Klee, M.

AU - Mauczok, R.

AU - Keur, W.

AU - Schmitz, Jurriaan

AU - Hueting, Raymond Josephus Engelbart

N1 - Conference code: 11

PY - 2008/11/27

Y1 - 2008/11/27

N2 - Barium strontium titanate with different compositions is deposited using wet-chemical processing on a glass planarization layer, on top of alumina substrates. Three samples were fabricated with BaxSr1-xTiO3 (BST) with the barium content x varying between 0.8 and 1. The poly-crystalline films are 530 ± 12 nm thick. The optimization in terms of permittivity and quality factor is explored for barium strontium titanate on alumina substrates. The trade-off between the permittivity and quality factor (at 1 GHz) is investigated. Our results show that wet-chemical processing on glass-planarized alumina results in a quality factor between 21–27 at 1 GHz and a tuning ratio from 1.8 to 2.0 at an electric field of 0.4 MV/cm.

AB - Barium strontium titanate with different compositions is deposited using wet-chemical processing on a glass planarization layer, on top of alumina substrates. Three samples were fabricated with BaxSr1-xTiO3 (BST) with the barium content x varying between 0.8 and 1. The poly-crystalline films are 530 ± 12 nm thick. The optimization in terms of permittivity and quality factor is explored for barium strontium titanate on alumina substrates. The trade-off between the permittivity and quality factor (at 1 GHz) is investigated. Our results show that wet-chemical processing on glass-planarized alumina results in a quality factor between 21–27 at 1 GHz and a tuning ratio from 1.8 to 2.0 at an electric field of 0.4 MV/cm.

KW - EWI-14615

KW - METIS-255006

KW - IR-62614

KW - SC-ICF: Integrated Circuit Fabrication

M3 - Conference contribution

SN - 978-90-73461-56-7

SP - 506

EP - 508

BT - Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)

PB - STW

CY - Utrecht, The Netherlands

T2 - 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008

Y2 - 27 November 2008 through 28 November 2008

ER -