The use of a multi-ISFET sensor fabricated in a single substrate

Bart van der Schoot; Hans Voorthuyzen; Piet Bergveld

doi:10.1016/0250-6874(87)80065-3

The use of a multi-ISFET sensor fabricated in a single substrate

Bart van der Schoot, Hans Voorthuyzen, Piet Bergveld

Research output: Contribution to journal › Article › Academic

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Abstract

The consequences of a constant substrate bias on the operation of ISFETs in a source and drain follower circuit are briefly discussed. The biasing of the substrate becomes necessary as only one substrate contact is available on a chip that contains several ISFETs. Although the gain of the follower circuits therefore becomes smaller than unity, the transfer is practically linear and the application of the ISFETs is not restricted.

Original language	English
Pages (from-to)	463-468
Journal	Sensors and actuators
Volume	12
Issue number	4
DOIs	https://doi.org/10.1016/0250-6874(87)80065-3
Publication status	Published - 1987

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van der Schoot, B., Voorthuyzen, H., & Bergveld, P. (1987). The use of a multi-ISFET sensor fabricated in a single substrate. Sensors and actuators, 12(4), 463-468. https://doi.org/10.1016/0250-6874(87)80065-3

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abstract = "The consequences of a constant substrate bias on the operation of ISFETs in a source and drain follower circuit are briefly discussed. The biasing of the substrate becomes necessary as only one substrate contact is available on a chip that contains several ISFETs. Although the gain of the follower circuits therefore becomes smaller than unity, the transfer is practically linear and the application of the ISFETs is not restricted.",

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AB - The consequences of a constant substrate bias on the operation of ISFETs in a source and drain follower circuit are briefly discussed. The biasing of the substrate becomes necessary as only one substrate contact is available on a chip that contains several ISFETs. Although the gain of the follower circuits therefore becomes smaller than unity, the transfer is practically linear and the application of the ISFETs is not restricted.

U2 - 10.1016/0250-6874(87)80065-3

DO - 10.1016/0250-6874(87)80065-3

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