Theoretical model of superconducting spintronic SIsFS devices

S.V. Bakurskiy; N.V. Klenov; I.I. Soloviev; V.V. Bol'ginov; V.V. Ryazanov; I.V. Vernik; O.A. Mukhanov; M..Y. Kupriyanov; Alexandre Avraamovitch Golubov

doi:10.1063/1.4805032

Theoretical model of superconducting spintronic SIsFS devices

S.V. Bakurskiy, N.V. Klenov, I.I. Soloviev, V.V. Bol'ginov, V.V. Ryazanov, I.V. Vernik, O.A. Mukhanov, M..Y. Kupriyanov, Alexandre Avraamovitch Golubov

Research output: Contribution to journal › Article › Academic › peer-review

60 Citations (Scopus)

Abstract

Motivated by recent progress in the development of cryogenic memory compatible with single flux quantum (SFQ) circuits, we have performed a theoretical study of magnetic SIsFS Josephson junctions, where “S” is a bulk superconductor, “s” is a thin superconducting film, “F” is a metallic ferromagnet, and “I” is an insulator. We calculate the Josephson current as a function of s and F layers thickness, temperature, and exchange energy of F film. We outline several modes of operation of these junctions and demonstrate their unique ability to have large product of a critical current IC and a normal-state resistance RN in the π state, comparable to that in superconductor–insulator–superconductor tunnel junctions commonly used in SFQ circuits. We develop a model describing switching of the Josephson critical current in these devices by external magnetic field. The results are in good agreement with the experimental data for Nb-Al/AlO x -Nb-Pd0.99Fe0.01-Nb junctions

Original language	Undefined
Article number	192603
Pages (from-to)	192603-1-192603-4
Journal	Applied physics letters
Volume	102
Issue number	19
DOIs	https://doi.org/10.1063/1.4805032
Publication status	Published - 2013

Keywords

METIS-301647
IR-88954

Access to Document

10.1063/1.4805032

Cite this

@article{91a0894e6a4f4335a47c2195c4411bb1,

title = "Theoretical model of superconducting spintronic SIsFS devices",

abstract = "Motivated by recent progress in the development of cryogenic memory compatible with single flux quantum (SFQ) circuits, we have performed a theoretical study of magnetic SIsFS Josephson junctions, where “S” is a bulk superconductor, “s” is a thin superconducting film, “F” is a metallic ferromagnet, and “I” is an insulator. We calculate the Josephson current as a function of s and F layers thickness, temperature, and exchange energy of F film. We outline several modes of operation of these junctions and demonstrate their unique ability to have large product of a critical current IC and a normal-state resistance RN in the π state, comparable to that in superconductor–insulator–superconductor tunnel junctions commonly used in SFQ circuits. We develop a model describing switching of the Josephson critical current in these devices by external magnetic field. The results are in good agreement with the experimental data for Nb-Al/AlO x -Nb-Pd0.99Fe0.01-Nb junctions",

keywords = "METIS-301647, IR-88954",

author = "S.V. Bakurskiy and N.V. Klenov and I.I. Soloviev and V.V. Bol'ginov and V.V. Ryazanov and I.V. Vernik and O.A. Mukhanov and M..Y. Kupriyanov and Golubov, {Alexandre Avraamovitch}",

year = "2013",

doi = "10.1063/1.4805032",

language = "Undefined",

volume = "102",

pages = "192603--1--192603--4",

journal = "Applied physics letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - Theoretical model of superconducting spintronic SIsFS devices

AU - Bakurskiy, S.V.

AU - Klenov, N.V.

AU - Soloviev, I.I.

AU - Bol'ginov, V.V.

AU - Ryazanov, V.V.

AU - Vernik, I.V.

AU - Mukhanov, O.A.

AU - Kupriyanov, M..Y.

AU - Golubov, Alexandre Avraamovitch

PY - 2013

Y1 - 2013

N2 - Motivated by recent progress in the development of cryogenic memory compatible with single flux quantum (SFQ) circuits, we have performed a theoretical study of magnetic SIsFS Josephson junctions, where “S” is a bulk superconductor, “s” is a thin superconducting film, “F” is a metallic ferromagnet, and “I” is an insulator. We calculate the Josephson current as a function of s and F layers thickness, temperature, and exchange energy of F film. We outline several modes of operation of these junctions and demonstrate their unique ability to have large product of a critical current IC and a normal-state resistance RN in the π state, comparable to that in superconductor–insulator–superconductor tunnel junctions commonly used in SFQ circuits. We develop a model describing switching of the Josephson critical current in these devices by external magnetic field. The results are in good agreement with the experimental data for Nb-Al/AlO x -Nb-Pd0.99Fe0.01-Nb junctions

AB - Motivated by recent progress in the development of cryogenic memory compatible with single flux quantum (SFQ) circuits, we have performed a theoretical study of magnetic SIsFS Josephson junctions, where “S” is a bulk superconductor, “s” is a thin superconducting film, “F” is a metallic ferromagnet, and “I” is an insulator. We calculate the Josephson current as a function of s and F layers thickness, temperature, and exchange energy of F film. We outline several modes of operation of these junctions and demonstrate their unique ability to have large product of a critical current IC and a normal-state resistance RN in the π state, comparable to that in superconductor–insulator–superconductor tunnel junctions commonly used in SFQ circuits. We develop a model describing switching of the Josephson critical current in these devices by external magnetic field. The results are in good agreement with the experimental data for Nb-Al/AlO x -Nb-Pd0.99Fe0.01-Nb junctions

KW - METIS-301647

KW - IR-88954

U2 - 10.1063/1.4805032

DO - 10.1063/1.4805032

M3 - Article

SN - 0003-6951

VL - 102

SP - 192603-1-192603-4

JO - Applied physics letters

JF - Applied physics letters

IS - 19

M1 - 192603

ER -