Theoretical model of superconducting spintronic SIsFS devices

S.V. Bakurskiy, N.V. Klenov, I.I. Soloviev, V.V. Bol'ginov, V.V. Ryazanov, I.V. Vernik, O.A. Mukhanov, M..Y. Kupriyanov, Alexandre Avraamovitch Golubov

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Abstract

Motivated by recent progress in the development of cryogenic memory compatible with single flux quantum (SFQ) circuits, we have performed a theoretical study of magnetic SIsFS Josephson junctions, where “S” is a bulk superconductor, “s” is a thin superconducting film, “F” is a metallic ferromagnet, and “I” is an insulator. We calculate the Josephson current as a function of s and F layers thickness, temperature, and exchange energy of F film. We outline several modes of operation of these junctions and demonstrate their unique ability to have large product of a critical current IC and a normal-state resistance RN in the π state, comparable to that in superconductor–insulator–superconductor tunnel junctions commonly used in SFQ circuits. We develop a model describing switching of the Josephson critical current in these devices by external magnetic field. The results are in good agreement with the experimental data for Nb-Al/AlO x -Nb-Pd0.99Fe0.01-Nb junctions
Original languageUndefined
Article number192603
Pages (from-to)192603-1-192603-4
JournalApplied physics letters
Volume102
Issue number19
DOIs
Publication statusPublished - 2013

Keywords

  • METIS-301647
  • IR-88954

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