Theory of charge transport in diffusive normal metal conventional superconductor point contacts

Y. Tanaka, Alexandre Avraamovitch Golubov, S. Kashiwaya

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Abstract

Tunneling conductance in diffusive normal (DN) metal/insulator/s-wave superconductor junctions is calculated for various situations by changing the magnitudes of the resistance and Thouless energy in DN and the transparency of the insulating barrier. The generalized boundary condition introduced by Nazarov [Superlattices and Microstructures 25, 1221 (1999)] is applied, where the ballistic theory by Blonder, Tinkham, and Klapwijk and the diffusive theory by Volkov, Zaitsev, and Klapwijk based on the boundary condition of Kupriyanov and Lukichev are naturally reproduced. It is shown that the proximity effect can enhance (reduce) the tunneling conductance for junctions with a low (high) transparency. A wide variety of dependencies of tunneling conductance on voltage bias is demonstrated including a U-shaped gap like structure, a zero-bias conductance peak, and a zero-bias conductance dip. The temperature dependence of tunneling conductance is also calculated, and the conditions for the reentrance effect are studied.
Original languageEnglish
Pages (from-to)054513-
JournalPhysical review C: Nuclear physics
Volume68
Issue number5
DOIs
Publication statusPublished - 2003

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metals
boundary conditions
ballistics
superlattices
insulators
temperature dependence
microstructure
electric potential
energy

Keywords

  • METIS-213637
  • IR-40678

Cite this

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title = "Theory of charge transport in diffusive normal metal conventional superconductor point contacts",
abstract = "Tunneling conductance in diffusive normal (DN) metal/insulator/s-wave superconductor junctions is calculated for various situations by changing the magnitudes of the resistance and Thouless energy in DN and the transparency of the insulating barrier. The generalized boundary condition introduced by Nazarov [Superlattices and Microstructures 25, 1221 (1999)] is applied, where the ballistic theory by Blonder, Tinkham, and Klapwijk and the diffusive theory by Volkov, Zaitsev, and Klapwijk based on the boundary condition of Kupriyanov and Lukichev are naturally reproduced. It is shown that the proximity effect can enhance (reduce) the tunneling conductance for junctions with a low (high) transparency. A wide variety of dependencies of tunneling conductance on voltage bias is demonstrated including a U-shaped gap like structure, a zero-bias conductance peak, and a zero-bias conductance dip. The temperature dependence of tunneling conductance is also calculated, and the conditions for the reentrance effect are studied.",
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Theory of charge transport in diffusive normal metal conventional superconductor point contacts. / Tanaka, Y.; Golubov, Alexandre Avraamovitch; Kashiwaya, S.

In: Physical review C: Nuclear physics, Vol. 68, No. 5, 2003, p. 054513-.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Theory of charge transport in diffusive normal metal conventional superconductor point contacts

AU - Tanaka, Y.

AU - Golubov, Alexandre Avraamovitch

AU - Kashiwaya, S.

PY - 2003

Y1 - 2003

N2 - Tunneling conductance in diffusive normal (DN) metal/insulator/s-wave superconductor junctions is calculated for various situations by changing the magnitudes of the resistance and Thouless energy in DN and the transparency of the insulating barrier. The generalized boundary condition introduced by Nazarov [Superlattices and Microstructures 25, 1221 (1999)] is applied, where the ballistic theory by Blonder, Tinkham, and Klapwijk and the diffusive theory by Volkov, Zaitsev, and Klapwijk based on the boundary condition of Kupriyanov and Lukichev are naturally reproduced. It is shown that the proximity effect can enhance (reduce) the tunneling conductance for junctions with a low (high) transparency. A wide variety of dependencies of tunneling conductance on voltage bias is demonstrated including a U-shaped gap like structure, a zero-bias conductance peak, and a zero-bias conductance dip. The temperature dependence of tunneling conductance is also calculated, and the conditions for the reentrance effect are studied.

AB - Tunneling conductance in diffusive normal (DN) metal/insulator/s-wave superconductor junctions is calculated for various situations by changing the magnitudes of the resistance and Thouless energy in DN and the transparency of the insulating barrier. The generalized boundary condition introduced by Nazarov [Superlattices and Microstructures 25, 1221 (1999)] is applied, where the ballistic theory by Blonder, Tinkham, and Klapwijk and the diffusive theory by Volkov, Zaitsev, and Klapwijk based on the boundary condition of Kupriyanov and Lukichev are naturally reproduced. It is shown that the proximity effect can enhance (reduce) the tunneling conductance for junctions with a low (high) transparency. A wide variety of dependencies of tunneling conductance on voltage bias is demonstrated including a U-shaped gap like structure, a zero-bias conductance peak, and a zero-bias conductance dip. The temperature dependence of tunneling conductance is also calculated, and the conditions for the reentrance effect are studied.

KW - METIS-213637

KW - IR-40678

U2 - 10.1103/PhysRevB.68.054513

DO - 10.1103/PhysRevB.68.054513

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JO - Physical review C: Nuclear physics

JF - Physical review C: Nuclear physics

SN - 0556-2813

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