Despite its high chemical stability, sputtered stoichiometric TiN can still be oxidized at temperatures below 400 ºC, whereas a non-stoichiometric TiN is known to oxidize even at room temperature. In this work, the oxidation behaviour of thin TiN layers, realized via atomic layer deposition (ALD), is investigated. Our experiments on thermal oxidation of ALD TiN revealed the existence of a linear and parabolic regime. The extracted activation energies for the parabolic regime resemble the values obtained earlier for sputtered TiN (i.e., 2.0 eV and 1.55 eV for dry and wet oxidation, respectively). Oxidation of ALD TiN layers in reactive plasma’s showed the existence of two regimes; the first regime is linear and independent of temperature while the second regime depends on the temperature.
|Title of host publication||Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)|
|Place of Publication||Utrecht, The Netherlands|
|Number of pages||4|
|Publication status||Published - 27 Nov 2008|
|Event||11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008 - Veldhoven, Netherlands|
Duration: 27 Nov 2008 → 28 Nov 2008
Conference number: 11
|Publisher||Technology Foundation STW|
|Workshop||11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008|
|Period||27/11/08 → 28/11/08|
- SC-ICS: Integrated Chemical Sensors
Groenland, A. W., Brunets, I., Boogaard, A., Aarnink, A. A. I., Kovalgin, A. Y., & Schmitz, J. (2008). Thermal and plasma-enhanced oxidation of ALD TiN. In Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008) (pp. 468-471). Utrecht, The Netherlands: STW.