Thermal and plasma-enhanced oxidation of ALD TiN

A.W. Groenland; I. Brunets; A. Boogaard; Antonius A.I. Aarnink; Alexeij Y. Kovalgin; Jurriaan Schmitz

Thermal and plasma-enhanced oxidation of ALD TiN

A.W. Groenland, I. Brunets, A. Boogaard, Antonius A.I. Aarnink, Alexeij Y. Kovalgin, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Despite its high chemical stability, sputtered stoichiometric TiN can still be oxidized at temperatures below 400 ºC, whereas a non-stoichiometric TiN is known to oxidize even at room temperature. In this work, the oxidation behaviour of thin TiN layers, realized via atomic layer deposition (ALD), is investigated. Our experiments on thermal oxidation of ALD TiN revealed the existence of a linear and parabolic regime. The extracted activation energies for the parabolic regime resemble the values obtained earlier for sputtered TiN (i.e., 2.0 eV and 1.55 eV for dry and wet oxidation, respectively). Oxidation of ALD TiN layers in reactive plasma’s showed the existence of two regimes; the first regime is linear and independent of temperature while the second regime depends on the temperature.

Original language	Undefined
Title of host publication	Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)
Place of Publication	Utrecht, The Netherlands
Publisher	STW
Pages	468-471
Number of pages	4
ISBN (Print)	978-90-73461-56-7
Publication status	Published - 27 Nov 2008
Event	11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008 - Veldhoven, Netherlands Duration: 27 Nov 2008 → 28 Nov 2008 Conference number: 11

Publication series

Name
Publisher	Technology Foundation STW
Number	WoTUG-31

Workshop

Workshop	11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008
Abbreviated title	SAFE
Country	Netherlands
City	Veldhoven
Period	27/11/08 → 28/11/08

Keywords

SC-ICS: Integrated Chemical Sensors
METIS-254995
EWI-14603
IR-65214

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Cite this

@inproceedings{7d7768ea691b4d1c93c86f24c5a7bf82,

title = "Thermal and plasma-enhanced oxidation of ALD TiN",

abstract = "Despite its high chemical stability, sputtered stoichiometric TiN can still be oxidized at temperatures below 400 ºC, whereas a non-stoichiometric TiN is known to oxidize even at room temperature. In this work, the oxidation behaviour of thin TiN layers, realized via atomic layer deposition (ALD), is investigated. Our experiments on thermal oxidation of ALD TiN revealed the existence of a linear and parabolic regime. The extracted activation energies for the parabolic regime resemble the values obtained earlier for sputtered TiN (i.e., 2.0 eV and 1.55 eV for dry and wet oxidation, respectively). Oxidation of ALD TiN layers in reactive plasma{\textquoteright}s showed the existence of two regimes; the first regime is linear and independent of temperature while the second regime depends on the temperature.",

keywords = "SC-ICS: Integrated Chemical Sensors, METIS-254995, EWI-14603, IR-65214",

author = "A.W. Groenland and I. Brunets and A. Boogaard and Aarnink, {Antonius A.I.} and Kovalgin, {Alexeij Y.} and Jurriaan Schmitz",

year = "2008",

month = nov,

day = "27",

language = "Undefined",

isbn = "978-90-73461-56-7",

publisher = "STW",

number = "WoTUG-31",

pages = "468--471",

booktitle = "Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)",

note = "null ; Conference date: 27-11-2008 Through 28-11-2008",

}

Groenland, AW, Brunets, I, Boogaard, A, Aarnink, AAI , Kovalgin, AY & Schmitz, J 2008, Thermal and plasma-enhanced oxidation of ALD TiN. in Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008). STW, Utrecht, The Netherlands, pp. 468-471, 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008, Veldhoven, Netherlands, 27/11/08.

Thermal and plasma-enhanced oxidation of ALD TiN. / Groenland, A.W.; Brunets, I.; Boogaard, A.; Aarnink, Antonius A.I.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan.

Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008). Utrecht, The Netherlands : STW, 2008. p. 468-471.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Thermal and plasma-enhanced oxidation of ALD TiN

AU - Groenland, A.W.

AU - Brunets, I.

AU - Boogaard, A.

AU - Aarnink, Antonius A.I.

AU - Kovalgin, Alexeij Y.

AU - Schmitz, Jurriaan

N1 - Conference code: 11

PY - 2008/11/27

Y1 - 2008/11/27

N2 - Despite its high chemical stability, sputtered stoichiometric TiN can still be oxidized at temperatures below 400 ºC, whereas a non-stoichiometric TiN is known to oxidize even at room temperature. In this work, the oxidation behaviour of thin TiN layers, realized via atomic layer deposition (ALD), is investigated. Our experiments on thermal oxidation of ALD TiN revealed the existence of a linear and parabolic regime. The extracted activation energies for the parabolic regime resemble the values obtained earlier for sputtered TiN (i.e., 2.0 eV and 1.55 eV for dry and wet oxidation, respectively). Oxidation of ALD TiN layers in reactive plasma’s showed the existence of two regimes; the first regime is linear and independent of temperature while the second regime depends on the temperature.

AB - Despite its high chemical stability, sputtered stoichiometric TiN can still be oxidized at temperatures below 400 ºC, whereas a non-stoichiometric TiN is known to oxidize even at room temperature. In this work, the oxidation behaviour of thin TiN layers, realized via atomic layer deposition (ALD), is investigated. Our experiments on thermal oxidation of ALD TiN revealed the existence of a linear and parabolic regime. The extracted activation energies for the parabolic regime resemble the values obtained earlier for sputtered TiN (i.e., 2.0 eV and 1.55 eV for dry and wet oxidation, respectively). Oxidation of ALD TiN layers in reactive plasma’s showed the existence of two regimes; the first regime is linear and independent of temperature while the second regime depends on the temperature.

KW - SC-ICS: Integrated Chemical Sensors

KW - METIS-254995

KW - EWI-14603

KW - IR-65214

M3 - Conference contribution

SN - 978-90-73461-56-7

SP - 468

EP - 471

BT - Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)

PB - STW

CY - Utrecht, The Netherlands

Y2 - 27 November 2008 through 28 November 2008

ER -