Thermal and plasma-enhanced oxidation of ALD TiN

A.W. Groenland, I. Brunets, A. Boogaard, Antonius A.I. Aarnink, Alexeij Y. Kovalgin, Jurriaan Schmitz

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    Despite its high chemical stability, sputtered stoichiometric TiN can still be oxidized at temperatures below 400 ºC, whereas a non-stoichiometric TiN is known to oxidize even at room temperature. In this work, the oxidation behaviour of thin TiN layers, realized via atomic layer deposition (ALD), is investigated. Our experiments on thermal oxidation of ALD TiN revealed the existence of a linear and parabolic regime. The extracted activation energies for the parabolic regime resemble the values obtained earlier for sputtered TiN (i.e., 2.0 eV and 1.55 eV for dry and wet oxidation, respectively). Oxidation of ALD TiN layers in reactive plasma’s showed the existence of two regimes; the first regime is linear and independent of temperature while the second regime depends on the temperature.
    Original languageUndefined
    Title of host publicationProceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)
    Place of PublicationUtrecht, The Netherlands
    Number of pages4
    ISBN (Print)978-90-73461-56-7
    Publication statusPublished - 27 Nov 2008
    Event11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008 - Veldhoven, Netherlands
    Duration: 27 Nov 200828 Nov 2008
    Conference number: 11

    Publication series

    PublisherTechnology Foundation STW


    Workshop11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008
    Abbreviated titleSAFE


    • SC-ICS: Integrated Chemical Sensors
    • METIS-254995
    • EWI-14603
    • IR-65214

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