Thermal atomic layer deposition and oxidation of TiN monitored by in-situ spectroscopic ellipsometry

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    Abstract

    Thin TiN films have many important applications in Integrated Circuit (IC) technology. In spite of its chemical inertness, it is reported that TiN can be oxidized when exposed to oxidants (O2, H2O, etc.). To avoid an undesired oxidation of the metal-nitride layers, a study on this process is necessary. In this work, we present our study on thermal atomic layer deposition (ALD) of TiN films followed by their dry oxidation in oxygen ambient. For both processes, in-situ monitoring by spectroscopic ellipsometry is carried out.
    Original languageUndefined
    Title of host publicationProceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors
    Place of PublicationUtrecht, the Netherlands
    PublisherSTW
    Pages59-62
    Number of pages4
    ISBN (Print)978-90-73461-62-8
    Publication statusPublished - 26 Nov 2009
    Event12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009 - Veldhoven, Netherlands
    Duration: 26 Nov 200927 Nov 2009
    Conference number: 12

    Publication series

    Name
    PublisherTechnology Foundation STW

    Conference

    Conference12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period26/11/0927/11/09

    Keywords

    • METIS-264273
    • IR-69059
    • Atomic Layer Deposition
    • ALD
    • TiN
    • EWI-17068
    • Titanium oxide
    • Spectroscopic ellipsometry
    • Dry oxidation
    • SC-ICF: Integrated Circuit Fabrication
    • Titanium Nitride

    Cite this

    Van Hao, B., Aarnink, A. A. I., Kovalgin, A. Y., Wolters, R. A. M., & Schmitz, J. (2009). Thermal atomic layer deposition and oxidation of TiN monitored by in-situ spectroscopic ellipsometry. In Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (pp. 59-62). Utrecht, the Netherlands: STW.