Thermal atomic layer deposition and oxidation of TiN monitored by in-situ spectroscopic ellipsometry

B. Van Hao; Antonius A.I. Aarnink; Alexeij Y. Kovalgin; Robertus A.M. Wolters; Jurriaan Schmitz

Thermal atomic layer deposition and oxidation of TiN monitored by in-situ spectroscopic ellipsometry

B. Van Hao, Antonius A.I. Aarnink, Alexeij Y. Kovalgin, Robertus A.M. Wolters, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

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Abstract

Thin TiN films have many important applications in Integrated Circuit (IC) technology. In spite of its chemical inertness, it is reported that TiN can be oxidized when exposed to oxidants (O2, H2O, etc.). To avoid an undesired oxidation of the metal-nitride layers, a study on this process is necessary. In this work, we present our study on thermal atomic layer deposition (ALD) of TiN films followed by their dry oxidation in oxygen ambient. For both processes, in-situ monitoring by spectroscopic ellipsometry is carried out.

Original language	Undefined
Title of host publication	Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors
Place of Publication	Utrecht, the Netherlands
Publisher	STW
Pages	59-62
Number of pages	4
ISBN (Print)	978-90-73461-62-8
Publication status	Published - 26 Nov 2009
Event	12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009 - Veldhoven, Netherlands Duration: 26 Nov 2009 → 27 Nov 2009 Conference number: 12

Publication series

Name
Publisher	Technology Foundation STW

Conference

Conference	12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009
Abbreviated title	SAFE
Country/Territory	Netherlands
City	Veldhoven
Period	26/11/09 → 27/11/09

Keywords

METIS-264273
IR-69059
Atomic Layer Deposition
ALD
TiN
EWI-17068
Titanium oxide
Spectroscopic ellipsometry
Dry oxidation
SC-ICF: Integrated Circuit Fabrication
Titanium Nitride

Access to Document

http://eprints.eemcs.utwente.nl/secure2/17068/01/bui.pdf

Cite this

Van Hao, B., Aarnink, A. A. I., Kovalgin, A. Y., Wolters, R. A. M., & Schmitz, J. (2009). Thermal atomic layer deposition and oxidation of TiN monitored by in-situ spectroscopic ellipsometry. In Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (pp. 59-62). STW. http://eprints.eemcs.utwente.nl/secure2/17068/01/bui.pdf

@inproceedings{c1647daf33234ebe94c7f10ee162b02f,

title = "Thermal atomic layer deposition and oxidation of TiN monitored by in-situ spectroscopic ellipsometry",

abstract = "Thin TiN films have many important applications in Integrated Circuit (IC) technology. In spite of its chemical inertness, it is reported that TiN can be oxidized when exposed to oxidants (O2, H2O, etc.). To avoid an undesired oxidation of the metal-nitride layers, a study on this process is necessary. In this work, we present our study on thermal atomic layer deposition (ALD) of TiN films followed by their dry oxidation in oxygen ambient. For both processes, in-situ monitoring by spectroscopic ellipsometry is carried out.",

keywords = "METIS-264273, IR-69059, Atomic Layer Deposition, ALD, TiN, EWI-17068, Titanium oxide, Spectroscopic ellipsometry, Dry oxidation, SC-ICF: Integrated Circuit Fabrication, Titanium Nitride",

author = "\{Van Hao\}, B. and Aarnink, \{Antonius A.I.\} and Kovalgin, \{Alexeij Y.\} and Wolters, \{Robertus A.M.\} and Jurriaan Schmitz",

year = "2009",

month = nov,

day = "26",

language = "Undefined",

isbn = "978-90-73461-62-8",

publisher = "STW",

pages = "59--62",

booktitle = "Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors",

note = "12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009 ; Conference date: 26-11-2009 Through 27-11-2009",

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Van Hao, B, Aarnink, AAI , Kovalgin, AY, Wolters, RAM & Schmitz, J 2009, Thermal atomic layer deposition and oxidation of TiN monitored by in-situ spectroscopic ellipsometry. in Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors. STW, Utrecht, the Netherlands, pp. 59-62, 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009, Veldhoven, Netherlands, 26/11/09. <http://eprints.eemcs.utwente.nl/secure2/17068/01/bui.pdf>

Thermal atomic layer deposition and oxidation of TiN monitored by in-situ spectroscopic ellipsometry. / Van Hao, B.; Aarnink, Antonius A.I.; Kovalgin, Alexeij Y. et al.
Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors. Utrecht, the Netherlands: STW, 2009. p. 59-62.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Thermal atomic layer deposition and oxidation of TiN monitored by in-situ spectroscopic ellipsometry

AU - Van Hao, B.

AU - Aarnink, Antonius A.I.

AU - Kovalgin, Alexeij Y.

AU - Wolters, Robertus A.M.

AU - Schmitz, Jurriaan

N1 - Conference code: 12

PY - 2009/11/26

Y1 - 2009/11/26

N2 - Thin TiN films have many important applications in Integrated Circuit (IC) technology. In spite of its chemical inertness, it is reported that TiN can be oxidized when exposed to oxidants (O2, H2O, etc.). To avoid an undesired oxidation of the metal-nitride layers, a study on this process is necessary. In this work, we present our study on thermal atomic layer deposition (ALD) of TiN films followed by their dry oxidation in oxygen ambient. For both processes, in-situ monitoring by spectroscopic ellipsometry is carried out.

AB - Thin TiN films have many important applications in Integrated Circuit (IC) technology. In spite of its chemical inertness, it is reported that TiN can be oxidized when exposed to oxidants (O2, H2O, etc.). To avoid an undesired oxidation of the metal-nitride layers, a study on this process is necessary. In this work, we present our study on thermal atomic layer deposition (ALD) of TiN films followed by their dry oxidation in oxygen ambient. For both processes, in-situ monitoring by spectroscopic ellipsometry is carried out.

KW - METIS-264273

KW - IR-69059

KW - Atomic Layer Deposition

KW - ALD

KW - TiN

KW - EWI-17068

KW - Titanium oxide

KW - Spectroscopic ellipsometry

KW - Dry oxidation

KW - SC-ICF: Integrated Circuit Fabrication

KW - Titanium Nitride

M3 - Conference contribution

SN - 978-90-73461-62-8

SP - 59

EP - 62

BT - Proceedings of the 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors

PB - STW

CY - Utrecht, the Netherlands

T2 - 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2009

Y2 - 26 November 2009 through 27 November 2009

ER -