Thermal design of fully-isolated bipolar transistors

S. Russo*, L. La Spina, V. D'Alessandro, N. Rinaldi, L. K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

The impact of layout parameters on the thermal behavior of BJTs with full dielectric isolation is extensively analyzed by measurements and numerical simulations. The influence of the aspect ratio of the emitter stripe as well as the consequences of the device scaling are investigated from a thermal viewpoint. It is shown that the metallization design plays a key role in the thermal response of fully-isolated devices. As a conclusion, plain guidelines are provided to optimize the thermal design.

Original languageEnglish
Title of host publication14th International Workshop on Thermal Investigation of ICs and Systems, THERMINIC 2008
Pages101-105
Number of pages5
DOIs
Publication statusPublished - 22 Dec 2008
Externally publishedYes
Event14th International Workshop on THERMal INvestigation of ICs and Systems, THERMINIC 2008 - Rome, Italy
Duration: 24 Sep 200826 Sep 2008

Conference

Conference14th International Workshop on THERMal INvestigation of ICs and Systems, THERMINIC 2008
Abbreviated titleTHERMINIC 2008
CountryItaly
CityRome
Period24/09/0826/09/08

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