Abstract
A novel analytical formulation for the biasing condition leading to thermal instability in a two-finger bipolar transistor is derived. The temperature dependence of the current gain as well as the mutual thermal coupling is accounted for. Different technologies are compared by varying the model parameters. It is demonstrated that SiGe devices are more thermally stable than comparable Si devices. Finally, the influence of the substrate modification on thermal instability is investigated. It is shown that thermally conducting substrates are needed to electro-thermally stabilize bipolar transistors.
Original language | English |
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Title of host publication | ESSDERC 2003 - Proceedings of the 33rd European Solid-State Device Research Conference |
Editors | Jose Franca, Paulo Freitas |
Publisher | IEEE |
Pages | 203-206 |
Number of pages | 4 |
ISBN (Print) | 9780780379992 |
DOIs | |
Publication status | Published - 1 Jan 2003 |
Externally published | Yes |
Event | 33rd European Solid-State Device Research Conference, ESSDERC 2003 - Lisboa, Portugal Duration: 16 Sept 2003 → 18 Sept 2003 Conference number: 33 |
Conference
Conference | 33rd European Solid-State Device Research Conference, ESSDERC 2003 |
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Abbreviated title | ESSDERC |
Country/Territory | Portugal |
City | Lisboa |
Period | 16/09/03 → 18/09/03 |