Thermal issues in a backwafer contacted silicon-on-glass integrated bipolar process

N. Nenadovic, L. K. Nanver, H. Schellevis, H. W. Van Zeijl, J. W. Slotboom

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Abstract

The electro-Thermal behavior of NPNs fabricated in a backwafer contacted silicon-on-glass integrated bipolar process has been investigated experimentally and the results are supported by 2D MEDICI simulations including the lattice heating equation. The devices are fabricated in silicon islands, the smallest of which is 23×10×0.94 μm3. This device exhibits thermal runaway in the Gummel plot at a very low power level of 1.5 mW, where VBE=0.8 V for VCB=0 V. A new emitter-current-controlled measurement technique is introduced, whereby the point of thermal runaway can be identified as a flyback point in the IC-VBE characteristics. Calculations are performed to estimate the temperature rise at this point along with the thermal resistance of the device. For the smallest device, the thermal resistance is found to be very high, about 15000 K/W. The thermal stability can be improved by reducing the thermal resistance, which is achieved here by either increasing the size of the silicon island or, more effectively, by adding large areas of metal directly to the device contacts. In all devices studied, the temperature rise at the flyback point was found to be about 25°C and not very dependent on the thermal resistance. The collector contact is fabricated on the backwafer directly under the emitter and has a very low series resistance. Increasing this series resistance to values comparable to bulk silicon devices is also shown to reduce the susceptibility to thermal runaway.

Original languageEnglish
Title of host publication2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001
EditorsGeorge E. Ponchak
PublisherIEEE
Pages114-121
Number of pages8
ISBN (Electronic)9780780371293
DOIs
Publication statusPublished - 1 Jan 2001
Externally publishedYes
Event3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001 - Ann Arbor, United States
Duration: 14 Sep 200114 Sep 2001
Conference number: 3

Conference

Conference3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001
Abbreviated titleSiRF 2001
CountryUnited States
CityAnn Arbor
Period14/09/0114/09/01

Keywords

  • Contact resistance
  • Equations
  • Heating
  • Immune system
  • Lattices
  • Measurement techniques
  • Medical simulation
  • Silicon
  • Temperature
  • Thermal resistance

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  • Cite this

    Nenadovic, N., Nanver, L. K., Schellevis, H., Van Zeijl, H. W., & Slotboom, J. W. (2001). Thermal issues in a backwafer contacted silicon-on-glass integrated bipolar process. In G. E. Ponchak (Ed.), 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001 (pp. 114-121). [942351] IEEE. https://doi.org/10.1109/SMIC.2001.942351