Thermal transient behavior of silicon-on-glass BJTs

S. Russo*, L. La Spina, V. D'Alessandro, N. Rinaldii, M. De Magistris, L. K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

7 Citations (Scopus)

Abstract

Calibrated 3-D numerical simulations are employed to quantify the influence of design parameters like emitter area, aspect ratio, distance to trenches, and thickness ofAIN heat spreaders on the thermal transient behavior of silicon-on-glass (SOG) bipolar transistors. A larger silicon island enclosed in the trenches reduces the thermal resistance at the expense of a slower thermal response of the system to a unitary power step. Conversely, the integration of AIN heat spreaders lowers both the thermal resistance and the rise time of the thermal impedance. Anin-house custom code is adopted to extract an optimized Foster network for the description of the dynamic transistor behavior, thereby allowing the analysis of the thermal frequency response.

Original languageEnglish
Title of host publication2009 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009
DOIs
Publication statusPublished - 21 Jul 2009
Externally publishedYes
Event10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009 - Aula Congress Centre, Delft, Netherlands
Duration: 26 Apr 200929 Apr 2009
Conference number: 10

Conference

Conference10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009
Abbreviated titleEuroSimE
CountryNetherlands
CityDelft
Period26/04/0929/04/09

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