Thermal transient behavior of silicon-on-glass BJTs

S. Russo; L. La Spina; V. D'Alessandro; N. Rinaldii; M. De Magistris; L. K. Nanver

doi:10.1109/ESIME.2009.4938484

Thermal transient behavior of silicon-on-glass BJTs

S. Russo^*, L. La Spina, V. D'Alessandro, N. Rinaldii, M. De Magistris, L. K. Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

7 Citations (Scopus)

Abstract

Calibrated 3-D numerical simulations are employed to quantify the influence of design parameters like emitter area, aspect ratio, distance to trenches, and thickness ofAIN heat spreaders on the thermal transient behavior of silicon-on-glass (SOG) bipolar transistors. A larger silicon island enclosed in the trenches reduces the thermal resistance at the expense of a slower thermal response of the system to a unitary power step. Conversely, the integration of AIN heat spreaders lowers both the thermal resistance and the rise time of the thermal impedance. Anin-house custom code is adopted to extract an optimized Foster network for the description of the dynamic transistor behavior, thereby allowing the analysis of the thermal frequency response.

Original language	English
Title of host publication	2009 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009
DOIs	https://doi.org/10.1109/ESIME.2009.4938484
Publication status	Published - 21 Jul 2009
Externally published	Yes
Event	10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009 - Aula Congress Centre, Delft, Netherlands Duration: 26 Apr 2009 → 29 Apr 2009 Conference number: 10

Conference

Conference	10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009
Abbreviated title	EuroSimE
Country/Territory	Netherlands
City	Delft
Period	26/04/09 → 29/04/09

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10.1109/ESIME.2009.4938484

Cite this

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title = "Thermal transient behavior of silicon-on-glass BJTs",

abstract = "Calibrated 3-D numerical simulations are employed to quantify the influence of design parameters like emitter area, aspect ratio, distance to trenches, and thickness ofAIN heat spreaders on the thermal transient behavior of silicon-on-glass (SOG) bipolar transistors. A larger silicon island enclosed in the trenches reduces the thermal resistance at the expense of a slower thermal response of the system to a unitary power step. Conversely, the integration of AIN heat spreaders lowers both the thermal resistance and the rise time of the thermal impedance. Anin-house custom code is adopted to extract an optimized Foster network for the description of the dynamic transistor behavior, thereby allowing the analysis of the thermal frequency response.",

author = "S. Russo and Spina, {L. La} and V. D'Alessandro and N. Rinaldii and Magistris, {M. De} and Nanver, {L. K.}",

year = "2009",

month = jul,

day = "21",

doi = "10.1109/ESIME.2009.4938484",

language = "English",

isbn = "9781424441617",

booktitle = "2009 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009",

note = "10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009, EuroSimE ; Conference date: 26-04-2009 Through 29-04-2009",

}

Russo, S, Spina, LL, D'Alessandro, V, Rinaldii, N, Magistris, MD & Nanver, LK 2009, Thermal transient behavior of silicon-on-glass BJTs. in 2009 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009., 4938484, 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009, Delft, Netherlands, 26/04/09. https://doi.org/10.1109/ESIME.2009.4938484

Thermal transient behavior of silicon-on-glass BJTs. / Russo, S.; Spina, L. La; D'Alessandro, V. et al.
2009 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009. 2009. 4938484.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Thermal transient behavior of silicon-on-glass BJTs

AU - Russo, S.

AU - Spina, L. La

AU - D'Alessandro, V.

AU - Rinaldii, N.

AU - Magistris, M. De

AU - Nanver, L. K.

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N2 - Calibrated 3-D numerical simulations are employed to quantify the influence of design parameters like emitter area, aspect ratio, distance to trenches, and thickness ofAIN heat spreaders on the thermal transient behavior of silicon-on-glass (SOG) bipolar transistors. A larger silicon island enclosed in the trenches reduces the thermal resistance at the expense of a slower thermal response of the system to a unitary power step. Conversely, the integration of AIN heat spreaders lowers both the thermal resistance and the rise time of the thermal impedance. Anin-house custom code is adopted to extract an optimized Foster network for the description of the dynamic transistor behavior, thereby allowing the analysis of the thermal frequency response.

AB - Calibrated 3-D numerical simulations are employed to quantify the influence of design parameters like emitter area, aspect ratio, distance to trenches, and thickness ofAIN heat spreaders on the thermal transient behavior of silicon-on-glass (SOG) bipolar transistors. A larger silicon island enclosed in the trenches reduces the thermal resistance at the expense of a slower thermal response of the system to a unitary power step. Conversely, the integration of AIN heat spreaders lowers both the thermal resistance and the rise time of the thermal impedance. Anin-house custom code is adopted to extract an optimized Foster network for the description of the dynamic transistor behavior, thereby allowing the analysis of the thermal frequency response.

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M3 - Conference contribution

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SN - 9781424441617

BT - 2009 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009

T2 - 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009

Y2 - 26 April 2009 through 29 April 2009

ER -

Thermal transient behavior of silicon-on-glass BJTs

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