Thermally induced switching field distribution of a single CoPt dot in a large array

J.B.C. Engelen; M. Delalande; A.J. le Fèbre; T. Bolhuis; T. Shimatsu; N. Kikuchi; L. Abelmann; J.C. Lodder; T. Shimatsu

doi:10.1088/0957-4484/21/3/035703

Thermally induced switching field distribution of a single CoPt dot in a large array

J.B.C. Engelen, M. Delalande, A.J. le Fèbre, T. Bolhuis, T. Shimatsu, N. Kikuchi, L. Abelmann, J.C. Lodder, T. Shimatsu

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Abstract

Magnetic dot arrays with perpendicular magnetic anisotropy were fabricated by patterning Co80Pt20-alloy continuous films by means of laser interference lithography. As commonly seen in large dot arrays, there is a large difference in the switching field between dots. Here we investigate the origin of this large switching field distribution, by using the anomalous Hall effect (AHE). The high sensitivity of the AHE permits us to measure the magnetic reversal of individual dots in an array of 80 dots with a diameter of 180 nm. By taking 1000 hysteresis loops we reveal the thermally induced switching field distribution SFDT of individual dots inside the array. The SFDT of the first and last switching dots were fitted to an Arrhenius model, and a clear difference in switching volume and magnetic anisotropy was observed between dots switching at low and high fields.

Original language	English
Pages (from-to)	035703-035709
Number of pages	7
Journal	Nanotechnology
Volume	21
Issue number	3
DOIs	https://doi.org/10.1088/0957-4484/21/3/035703
Publication status	Published - 22 Jan 2010

Keywords

TST-SMI: Formerly in EWI-SMI
TSTNE-Magnet-AHE: Anomalous Hall Effect
TST-uSPAM: micro Scanning Probe Array Memory

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title = "Thermally induced switching field distribution of a single CoPt dot in a large array",

abstract = "Magnetic dot arrays with perpendicular magnetic anisotropy were fabricated by patterning Co80Pt20-alloy continuous films by means of laser interference lithography. As commonly seen in large dot arrays, there is a large difference in the switching field between dots. Here we investigate the origin of this large switching field distribution, by using the anomalous Hall effect (AHE). The high sensitivity of the AHE permits us to measure the magnetic reversal of individual dots in an array of 80 dots with a diameter of 180 nm. By taking 1000 hysteresis loops we reveal the thermally induced switching field distribution SFDT of individual dots inside the array. The SFDT of the first and last switching dots were fitted to an Arrhenius model, and a clear difference in switching volume and magnetic anisotropy was observed between dots switching at low and high fields.",

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doi = "10.1088/0957-4484/21/3/035703",

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T1 - Thermally induced switching field distribution of a single CoPt dot in a large array

AU - Engelen, J.B.C.

AU - Delalande, M.

AU - le Fèbre, A.J.

AU - Bolhuis, T.

AU - Shimatsu, T.

AU - Kikuchi, N.

AU - Abelmann, L.

AU - Lodder, J.C.

AU - Shimatsu, T.

N1 - 10.1088/0957-4484/21/3/035703

PY - 2010/1/22

Y1 - 2010/1/22

N2 - Magnetic dot arrays with perpendicular magnetic anisotropy were fabricated by patterning Co80Pt20-alloy continuous films by means of laser interference lithography. As commonly seen in large dot arrays, there is a large difference in the switching field between dots. Here we investigate the origin of this large switching field distribution, by using the anomalous Hall effect (AHE). The high sensitivity of the AHE permits us to measure the magnetic reversal of individual dots in an array of 80 dots with a diameter of 180 nm. By taking 1000 hysteresis loops we reveal the thermally induced switching field distribution SFDT of individual dots inside the array. The SFDT of the first and last switching dots were fitted to an Arrhenius model, and a clear difference in switching volume and magnetic anisotropy was observed between dots switching at low and high fields.

AB - Magnetic dot arrays with perpendicular magnetic anisotropy were fabricated by patterning Co80Pt20-alloy continuous films by means of laser interference lithography. As commonly seen in large dot arrays, there is a large difference in the switching field between dots. Here we investigate the origin of this large switching field distribution, by using the anomalous Hall effect (AHE). The high sensitivity of the AHE permits us to measure the magnetic reversal of individual dots in an array of 80 dots with a diameter of 180 nm. By taking 1000 hysteresis loops we reveal the thermally induced switching field distribution SFDT of individual dots inside the array. The SFDT of the first and last switching dots were fitted to an Arrhenius model, and a clear difference in switching volume and magnetic anisotropy was observed between dots switching at low and high fields.

KW - TST-SMI: Formerly in EWI-SMI

KW - TSTNE-Magnet-AHE: Anomalous Hall Effect

KW - TST-uSPAM: micro Scanning Probe Array Memory

U2 - 10.1088/0957-4484/21/3/035703

DO - 10.1088/0957-4484/21/3/035703

M3 - Article

SN - 0957-4484

VL - 21

SP - 35703

EP - 35709

JO - Nanotechnology

JF - Nanotechnology

IS - 3

ER -

Thermally induced switching field distribution of a single CoPt dot in a large array

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Keywords

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