Thermally induced switching field distribution of a single CoPt dot in a large array

Johannes Bernardus Charles Engelen, M.Y. Delalande, A.J. le Fèbre, Thijs Bolhuis, T. Shimatsu, Nobuaki Kikuchi, Leon Abelmann, J.C. Lodder, T. Shimatsu

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    Abstract

    Magnetic dot arrays with perpendicular magnetic anisotropy were fabricated by patterning Co80Pt20-alloy continuous films by means of laser interference lithography. As commonly seen in large dot arrays, there is a large difference in the switching field between dots. Here we investigate the origin of this large switching field distribution, by using the anomalous Hall effect (AHE). The high sensitivity of the AHE permits us to measure the magnetic reversal of individual dots in an array of 80 dots with a diameter of 180 nm. By taking 1000 hysteresis loops we reveal the thermally induced switching field distribution SFDT of individual dots inside the array. The SFDT of the first and last switching dots were fitted to an Arrhenius model, and a clear difference in switching volume and magnetic anisotropy was observed between dots switching at low and high fields.
    Original languageUndefined
    Article number10.1088/0957-4484/21/3/035703
    Pages (from-to)035703-035709
    Number of pages7
    JournalNanotechnology
    Volume21
    Issue number3
    DOIs
    Publication statusPublished - 22 Jan 2010

    Keywords

    • METIS-276000
    • TST-SMI: Formerly in EWI-SMI
    • EWI-13823
    • TSTNE-Magnet-AHE: Anomalous Hall Effect
    • TST-uSPAM: micro Scanning Probe Array Memory
    • IR-68790

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