Magnetic dot arrays with perpendicular magnetic anisotropy were fabricated by patterning Co80Pt20-alloy continuous films by means of laser interference lithography. As commonly seen in large dot arrays, there is a large difference in the switching field between dots. Here we investigate the origin of this large switching field distribution, by using the anomalous Hall effect (AHE). The high sensitivity of the AHE permits us to measure the magnetic reversal of individual dots in an array of 80 dots with a diameter of 180 nm. By taking 1000 hysteresis loops we reveal the thermally induced switching field distribution SFDT of individual dots inside the array. The SFDT of the first and last switching dots were fitted to an Arrhenius model, and a clear difference in switching volume and magnetic anisotropy was observed between dots switching at low and high fields.
- TST-SMI: Formerly in EWI-SMI
- TSTNE-Magnet-AHE: Anomalous Hall Effect
- TST-uSPAM: micro Scanning Probe Array Memory