Thermodynamic analysis of semiconductor structures using a device simulator and lumped circuit modelling

A.J. Mouthaan; B.H. Krabbenborg

Thermodynamic analysis of semiconductor structures using a device simulator and lumped circuit modelling

A.J. Mouthaan
, B.H. Krabbenborg

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

Based on the implementation of coupled carrier and energy transport equations in a 2D object-oriented integrated package for device and process simulation, "TRENDY," electrothermal effects in semiconductor structures have been analyzed. The same approach is used for the analysis of (thermo) magnetic effects in semiconductor structures. The objectoriented approach has also made it possible 10 analyze, e.g., ion transport in fluids for JSFET structures and stress calculations in IC-processing steps. 1n general the applicability of continuous domain simulation LO sensors and actuators is discussed. For 30 elect.rothermal problems, a distributed lumped circuit modelling strategy bas been examined.

Original language	English
Pages (from-to)	125-137
Journal	Sensors and materials
Volume	6
Issue number	2
Publication status	Published - 1994

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Cite this

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title = "Thermodynamic analysis of semiconductor structures using a device simulator and lumped circuit modelling",

abstract = "Based on the implementation of coupled carrier and energy transport equations in a 2D object-oriented integrated package for device and process simulation, {"}TRENDY,{"} electrothermal effects in semiconductor structures have been analyzed. The same approach is used for the analysis of (thermo) magnetic effects in semiconductor structures. The objectoriented approach has also made it possible 10 analyze, e.g., ion transport in fluids for JSFET structures and stress calculations in IC-processing steps. 1n general the applicability of continuous domain simulation LO sensors and actuators is discussed. For 30 elect.rothermal problems, a distributed lumped circuit modelling strategy bas been examined.",

author = "A.J. Mouthaan and B.H. Krabbenborg",

year = "1994",

language = "English",

volume = "6",

pages = "125--137",

journal = "Sensors and materials",

issn = "0914-4935",

publisher = "M Y U Scientific Publishing Division",

number = "2",

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T1 - Thermodynamic analysis of semiconductor structures using a device simulator and lumped circuit modelling

AU - Mouthaan, A.J.

AU - Krabbenborg, B.H.

PY - 1994

Y1 - 1994

N2 - Based on the implementation of coupled carrier and energy transport equations in a 2D object-oriented integrated package for device and process simulation, "TRENDY," electrothermal effects in semiconductor structures have been analyzed. The same approach is used for the analysis of (thermo) magnetic effects in semiconductor structures. The objectoriented approach has also made it possible 10 analyze, e.g., ion transport in fluids for JSFET structures and stress calculations in IC-processing steps. 1n general the applicability of continuous domain simulation LO sensors and actuators is discussed. For 30 elect.rothermal problems, a distributed lumped circuit modelling strategy bas been examined.

AB - Based on the implementation of coupled carrier and energy transport equations in a 2D object-oriented integrated package for device and process simulation, "TRENDY," electrothermal effects in semiconductor structures have been analyzed. The same approach is used for the analysis of (thermo) magnetic effects in semiconductor structures. The objectoriented approach has also made it possible 10 analyze, e.g., ion transport in fluids for JSFET structures and stress calculations in IC-processing steps. 1n general the applicability of continuous domain simulation LO sensors and actuators is discussed. For 30 elect.rothermal problems, a distributed lumped circuit modelling strategy bas been examined.

M3 - Article

SN - 0914-4935

VL - 6

SP - 125

EP - 137

JO - Sensors and materials

JF - Sensors and materials

IS - 2

ER -

Thermodynamic analysis of semiconductor structures using a device simulator and lumped circuit modelling

Abstract

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