Thickness dependence of ferroelectric and piezoelectric properties in epitaxial PZT thin films

DMinh D. Nguyen, Matthijn Dekkers, Ruud Steenwelle, Xin Wan, Guus Rijnders

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Abstract

Epitaxial (110)-oriented Pb(Zr0.52,Ti0.48)O3 (PZT) thin films were fabricated on SrRuO3-coated (001) YSZ/Si and SrRuO3-coated (110) SrTiO3 (STO) substrates with various thicknesses ranging from 0.1 μm to 1.0 μm by pulsed laser deposition. The effects of the film thickness on the structure, ferroelectric and piezoelectric properties were systematically investigated as a function of the film thickness. On the STO substrate the remnant polarization of the films increased from 36.6 to 45.5 μC/cm2 with the increasing film thickness, while in the films on the silicon substrate the remnant polarization was in the range of 12.4 - 20.2μC/cm2. The improvement of the remnant polarization with increasing film thickness was due to the reduction of the film/electrode interface effect which leads to improve the switching of domains. The films on the STO substrate were in a compressive stress, while in the films on the silicon substrate a higher tensile stress was found. Compressive stress causes the ferroelectric domains to orient along the longitudinal direction (c-domain orientation), which in turn can result in an increase of the polarization. Moreover, the effective piezoelectric coefficient of the PZT thin films increased steady with increasing thickness. This effect is likely related to a mechanism of elastic domains that can move more easily in thicker film, and that give rise to out-ofplane piezoelectric displacement.
Original languageEnglish
Number of pages1
Publication statusPublished - 24 Jun 2012
EventElectroceramics XIII 2012 - University of Twente, Enschede, Netherlands
Duration: 24 Jun 201227 Jun 2012
Conference number: 13

Conference

ConferenceElectroceramics XIII 2012
CountryNetherlands
CityEnschede
Period24/06/1227/06/12

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film thickness
thin films
polarization
silicon
yttria-stabilized zirconia
tensile stress
pulsed laser deposition
thick films
electrodes
causes
coefficients

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Nguyen, DM. D., Dekkers, M., Steenwelle, R., Wan, X., & Rijnders, G. (2012). Thickness dependence of ferroelectric and piezoelectric properties in epitaxial PZT thin films. Poster session presented at Electroceramics XIII 2012, Enschede, Netherlands.
Nguyen, DMinh D. ; Dekkers, Matthijn ; Steenwelle, Ruud ; Wan, Xin ; Rijnders, Guus. / Thickness dependence of ferroelectric and piezoelectric properties in epitaxial PZT thin films. Poster session presented at Electroceramics XIII 2012, Enschede, Netherlands.1 p.
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abstract = "Epitaxial (110)-oriented Pb(Zr0.52,Ti0.48)O3 (PZT) thin films were fabricated on SrRuO3-coated (001) YSZ/Si and SrRuO3-coated (110) SrTiO3 (STO) substrates with various thicknesses ranging from 0.1 μm to 1.0 μm by pulsed laser deposition. The effects of the film thickness on the structure, ferroelectric and piezoelectric properties were systematically investigated as a function of the film thickness. On the STO substrate the remnant polarization of the films increased from 36.6 to 45.5 μC/cm2 with the increasing film thickness, while in the films on the silicon substrate the remnant polarization was in the range of 12.4 - 20.2μC/cm2. The improvement of the remnant polarization with increasing film thickness was due to the reduction of the film/electrode interface effect which leads to improve the switching of domains. The films on the STO substrate were in a compressive stress, while in the films on the silicon substrate a higher tensile stress was found. Compressive stress causes the ferroelectric domains to orient along the longitudinal direction (c-domain orientation), which in turn can result in an increase of the polarization. Moreover, the effective piezoelectric coefficient of the PZT thin films increased steady with increasing thickness. This effect is likely related to a mechanism of elastic domains that can move more easily in thicker film, and that give rise to out-ofplane piezoelectric displacement.",
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Nguyen, DMD, Dekkers, M, Steenwelle, R, Wan, X & Rijnders, G 2012, 'Thickness dependence of ferroelectric and piezoelectric properties in epitaxial PZT thin films' Electroceramics XIII 2012, Enschede, Netherlands, 24/06/12 - 27/06/12, .

Thickness dependence of ferroelectric and piezoelectric properties in epitaxial PZT thin films. / Nguyen, DMinh D.; Dekkers, Matthijn; Steenwelle, Ruud; Wan, Xin; Rijnders, Guus.

2012. Poster session presented at Electroceramics XIII 2012, Enschede, Netherlands.

Research output: Contribution to conferencePosterOther research output

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T1 - Thickness dependence of ferroelectric and piezoelectric properties in epitaxial PZT thin films

AU - Nguyen, DMinh D.

AU - Dekkers, Matthijn

AU - Steenwelle, Ruud

AU - Wan, Xin

AU - Rijnders, Guus

PY - 2012/6/24

Y1 - 2012/6/24

N2 - Epitaxial (110)-oriented Pb(Zr0.52,Ti0.48)O3 (PZT) thin films were fabricated on SrRuO3-coated (001) YSZ/Si and SrRuO3-coated (110) SrTiO3 (STO) substrates with various thicknesses ranging from 0.1 μm to 1.0 μm by pulsed laser deposition. The effects of the film thickness on the structure, ferroelectric and piezoelectric properties were systematically investigated as a function of the film thickness. On the STO substrate the remnant polarization of the films increased from 36.6 to 45.5 μC/cm2 with the increasing film thickness, while in the films on the silicon substrate the remnant polarization was in the range of 12.4 - 20.2μC/cm2. The improvement of the remnant polarization with increasing film thickness was due to the reduction of the film/electrode interface effect which leads to improve the switching of domains. The films on the STO substrate were in a compressive stress, while in the films on the silicon substrate a higher tensile stress was found. Compressive stress causes the ferroelectric domains to orient along the longitudinal direction (c-domain orientation), which in turn can result in an increase of the polarization. Moreover, the effective piezoelectric coefficient of the PZT thin films increased steady with increasing thickness. This effect is likely related to a mechanism of elastic domains that can move more easily in thicker film, and that give rise to out-ofplane piezoelectric displacement.

AB - Epitaxial (110)-oriented Pb(Zr0.52,Ti0.48)O3 (PZT) thin films were fabricated on SrRuO3-coated (001) YSZ/Si and SrRuO3-coated (110) SrTiO3 (STO) substrates with various thicknesses ranging from 0.1 μm to 1.0 μm by pulsed laser deposition. The effects of the film thickness on the structure, ferroelectric and piezoelectric properties were systematically investigated as a function of the film thickness. On the STO substrate the remnant polarization of the films increased from 36.6 to 45.5 μC/cm2 with the increasing film thickness, while in the films on the silicon substrate the remnant polarization was in the range of 12.4 - 20.2μC/cm2. The improvement of the remnant polarization with increasing film thickness was due to the reduction of the film/electrode interface effect which leads to improve the switching of domains. The films on the STO substrate were in a compressive stress, while in the films on the silicon substrate a higher tensile stress was found. Compressive stress causes the ferroelectric domains to orient along the longitudinal direction (c-domain orientation), which in turn can result in an increase of the polarization. Moreover, the effective piezoelectric coefficient of the PZT thin films increased steady with increasing thickness. This effect is likely related to a mechanism of elastic domains that can move more easily in thicker film, and that give rise to out-ofplane piezoelectric displacement.

M3 - Poster

ER -

Nguyen DMD, Dekkers M, Steenwelle R, Wan X, Rijnders G. Thickness dependence of ferroelectric and piezoelectric properties in epitaxial PZT thin films. 2012. Poster session presented at Electroceramics XIII 2012, Enschede, Netherlands.