Thickness-Dependent Band Gap Modification in BaBiO3

Rosa Luca Bouwmeester* (Corresponding Author), A. Brinkman, K. Sotthewes

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

The material BaBiO3 is known for its insulating character. However, for thin films, in the ultra-thin limit, metallicity is expected because the oxygen octahedra breathing mode will be suppressed as reported recently. Here, we confirm the influence of the oxygen breathing mode on the size of the band gap. The electronic properties of a BaBiO3 thickness series are studied using in-situ scanning tunneling microscopy. We observe a wide-gap (EG > 1.2 V) to small-gap (EG ≈ 0.07 eV) semiconductor transition as a function of a decreasing BaBiO3 film thickness. However, even for an ultra-thin BaBiO3 film, no metallic state is present. The dependence of the band gap size is found to be coinciding with the intensity of the Raman response of the breathing phonon mode as a function of thickness.
Original languageEnglish
Article number882
JournalNanomaterials
Volume11
Issue number4
DOIs
Publication statusPublished - 30 Mar 2021

Keywords

  • BaBiO3
  • surface reconstruction
  • band gap
  • complex oxide
  • perovskite
  • pulsed laser deposition
  • scanning tunneling microscopy
  • spectroscopy
  • UT-Gold-D

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