Thickness-Dependent Band Gap Modification in BaBiO3

R.L. Bouwmeester; A. Brinkman; K. Sotthewes

doi:10.3390/nano11040882

Thickness-Dependent Band Gap Modification in BaBiO₃

R.L. Bouwmeester^* (Corresponding Author), A. Brinkman, K. Sotthewes

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The material BaBiO3 is known for its insulating character. However, for thin films, in the ultra-thin limit, metallicity is expected because the oxygen octahedra breathing mode will be suppressed as reported recently. Here, we confirm the influence of the oxygen breathing mode on the size of the band gap. The electronic properties of a BaBiO3 thickness series are studied using in-situ scanning tunneling microscopy. We observe a wide-gap (EG > 1.2 V) to small-gap (EG ≈ 0.07 eV) semiconductor transition as a function of a decreasing BaBiO3 film thickness. However, even for an ultra-thin BaBiO3 film, no metallic state is present. The dependence of the band gap size is found to be coinciding with the intensity of the Raman response of the breathing phonon mode as a function of thickness.

Original language	English
Article number	882
Journal	Nanomaterials
Volume	11
Issue number	4
DOIs	https://doi.org/10.3390/nano11040882
Publication status	Published - 30 Mar 2021

Keywords

BaBiO3
surface reconstruction
band gap
complex oxide
perovskite
pulsed laser deposition
scanning tunneling microscopy
spectroscopy
UT-Gold-D

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nanomaterials-11-00882-v2Final published version, 4.02 MBLicence: CC BY

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title = "Thickness-Dependent Band Gap Modification in BaBiO3",

abstract = "The material BaBiO3 is known for its insulating character. However, for thin films, in the ultra-thin limit, metallicity is expected because the oxygen octahedra breathing mode will be suppressed as reported recently. Here, we confirm the influence of the oxygen breathing mode on the size of the band gap. The electronic properties of a BaBiO3 thickness series are studied using in-situ scanning tunneling microscopy. We observe a wide-gap (EG > 1.2 V) to small-gap (EG ≈ 0.07 eV) semiconductor transition as a function of a decreasing BaBiO3 film thickness. However, even for an ultra-thin BaBiO3 film, no metallic state is present. The dependence of the band gap size is found to be coinciding with the intensity of the Raman response of the breathing phonon mode as a function of thickness.",

keywords = "BaBiO3, surface reconstruction, band gap, complex oxide, perovskite, pulsed laser deposition, scanning tunneling microscopy, spectroscopy, UT-Gold-D",

author = "R.L. Bouwmeester and A. Brinkman and K. Sotthewes",

note = "Funding Information: Funding: The work is financially supported by NWO through a VICI grant (680-47-625/2716). Publisher Copyright: {\textcopyright} 2021 by the authors. Licensee MDPI, Basel, Switzerland. Financial transaction number: 342113039 ",

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AU - Bouwmeester, R.L.

AU - Brinkman, A.

AU - Sotthewes, K.

N1 - Funding Information: Funding: The work is financially supported by NWO through a VICI grant (680-47-625/2716). Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland. Financial transaction number: 342113039

PY - 2021/3/30

Y1 - 2021/3/30

N2 - The material BaBiO3 is known for its insulating character. However, for thin films, in the ultra-thin limit, metallicity is expected because the oxygen octahedra breathing mode will be suppressed as reported recently. Here, we confirm the influence of the oxygen breathing mode on the size of the band gap. The electronic properties of a BaBiO3 thickness series are studied using in-situ scanning tunneling microscopy. We observe a wide-gap (EG > 1.2 V) to small-gap (EG ≈ 0.07 eV) semiconductor transition as a function of a decreasing BaBiO3 film thickness. However, even for an ultra-thin BaBiO3 film, no metallic state is present. The dependence of the band gap size is found to be coinciding with the intensity of the Raman response of the breathing phonon mode as a function of thickness.

AB - The material BaBiO3 is known for its insulating character. However, for thin films, in the ultra-thin limit, metallicity is expected because the oxygen octahedra breathing mode will be suppressed as reported recently. Here, we confirm the influence of the oxygen breathing mode on the size of the band gap. The electronic properties of a BaBiO3 thickness series are studied using in-situ scanning tunneling microscopy. We observe a wide-gap (EG > 1.2 V) to small-gap (EG ≈ 0.07 eV) semiconductor transition as a function of a decreasing BaBiO3 film thickness. However, even for an ultra-thin BaBiO3 film, no metallic state is present. The dependence of the band gap size is found to be coinciding with the intensity of the Raman response of the breathing phonon mode as a function of thickness.

KW - BaBiO3

KW - surface reconstruction

KW - band gap

KW - complex oxide

KW - perovskite

KW - pulsed laser deposition

KW - scanning tunneling microscopy

KW - spectroscopy

KW - UT-Gold-D

UR - https://www.mdpi.com/2079-4991/11/4/882

U2 - 10.3390/nano11040882

DO - 10.3390/nano11040882

M3 - Article

VL - 11

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 4

M1 - 882

ER -

Thickness-Dependent Band Gap Modification in BaBiO₃

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Keywords

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